Microwave Characteristic and Application of Au/WSiN GaAs-MESFETs with Neutral Buried p-Layers
Summary :
LDD-structure GaAs-MESFETs with WSiN bilayer gate are fabricated adopting neutral buried p-layers formed by 50-keV Be-implantation. fT of 108 GHz and fmax of over 130 GHz are obtained on 0.2-µm gate length. A direct-coupled amplifier IC with bandwidth of 10 GHz are fabricated using 0.4 µm GaAs-MESFETs and achieves a high gain of 20 dB with a minimum NF of 3.2 dB with a power consumption of 365 mW. Moreover, a bandwidth of 20 GHz is predicted for the amplifier IC using 0.2-µm GaAs-MESFETs.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E74-C No.5 pp.1197-1201
- Publication Date
- 1991/05/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on the 3rd Asia-Pacific Microwave Conference)
- Category
- Active Devices and Circuits
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Kiyomitsu ONODERA, Yuhki IMAI, Kazuyoshi ASAI, "Microwave Characteristic and Application of Au/WSiN GaAs-MESFETs with Neutral Buried p-Layers" in IEICE TRANSACTIONS on Electronics,
vol. E74-C, no. 5, pp. 1197-1201, May 1991, doi: .
Abstract: LDD-structure GaAs-MESFETs with WSiN bilayer gate are fabricated adopting neutral buried p-layers formed by 50-keV Be-implantation. fT of 108 GHz and fmax of over 130 GHz are obtained on 0.2-µm gate length. A direct-coupled amplifier IC with bandwidth of 10 GHz are fabricated using 0.4 µm GaAs-MESFETs and achieves a high gain of 20 dB with a minimum NF of 3.2 dB with a power consumption of 365 mW. Moreover, a bandwidth of 20 GHz is predicted for the amplifier IC using 0.2-µm GaAs-MESFETs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e74-c_5_1197/_p
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@ARTICLE{e74-c_5_1197,
author={Kiyomitsu ONODERA, Yuhki IMAI, Kazuyoshi ASAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Microwave Characteristic and Application of Au/WSiN GaAs-MESFETs with Neutral Buried p-Layers},
year={1991},
volume={E74-C},
number={5},
pages={1197-1201},
abstract={LDD-structure GaAs-MESFETs with WSiN bilayer gate are fabricated adopting neutral buried p-layers formed by 50-keV Be-implantation. fT of 108 GHz and fmax of over 130 GHz are obtained on 0.2-µm gate length. A direct-coupled amplifier IC with bandwidth of 10 GHz are fabricated using 0.4 µm GaAs-MESFETs and achieves a high gain of 20 dB with a minimum NF of 3.2 dB with a power consumption of 365 mW. Moreover, a bandwidth of 20 GHz is predicted for the amplifier IC using 0.2-µm GaAs-MESFETs.},
keywords={},
doi={},
ISSN={},
month={May},}
Copy
TY - JOUR
TI - Microwave Characteristic and Application of Au/WSiN GaAs-MESFETs with Neutral Buried p-Layers
T2 - IEICE TRANSACTIONS on Electronics
SP - 1197
EP - 1201
AU - Kiyomitsu ONODERA
AU - Yuhki IMAI
AU - Kazuyoshi ASAI
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1991
AB - LDD-structure GaAs-MESFETs with WSiN bilayer gate are fabricated adopting neutral buried p-layers formed by 50-keV Be-implantation. fT of 108 GHz and fmax of over 130 GHz are obtained on 0.2-µm gate length. A direct-coupled amplifier IC with bandwidth of 10 GHz are fabricated using 0.4 µm GaAs-MESFETs and achieves a high gain of 20 dB with a minimum NF of 3.2 dB with a power consumption of 365 mW. Moreover, a bandwidth of 20 GHz is predicted for the amplifier IC using 0.2-µm GaAs-MESFETs.
ER -
English
