IEICE TRANSACTIONS on Electronics
A Study on Nonstationary Electron Transport in Submicron BP-SAINT GaAs MESFETs Using an Ensemble Monte Carlo Simulation
Summary :
The nonstationary electron transports in the BP-SAINT GaAs MESFETs with submicron gate lengths have been studied under the various conditions at 300 K by an ensemble Monte Carlo simulation. It is shown that the calculated drain currents fairly agree with the experiments. It has been found that Wang's effective saturation velocity of electrons, which is defined as 0.8 Vmax, depends not only on the gate length, but alsos on the gate voltage, the drain voltage, and the doping concentration of the channel, where Vmax is the maximum velocity in the channel. The dependence of the effective saturation velocity upon a gradient of the electric field is discussed. The spatial distributions of the valley population ratio (or the effective mass for the effective-single valley model) and the kinetic energy of electrons under the gate are studied by the ensemble Monte Carlo method to evaluate the validity of the relaxation time approximation for these device simulations. It is shown that the effective mass cannot be always specified as a fuction of the mean energy only and that the kinetic energy is not negligibly small around the middle of the channel compared with the thermal energy.
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- IEICE TRANSACTIONS on Electronics Vol.E74-C No.6 pp.1648-1655
- Publication Date
- 1991/06/25
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- Special Section PAPER (Special Issue on Device and Process Simulation for Ultra Large Scale Integration)
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Yoshinori YAMADA, "A Study on Nonstationary Electron Transport in Submicron BP-SAINT GaAs MESFETs Using an Ensemble Monte Carlo Simulation" in IEICE TRANSACTIONS on Electronics,
vol. E74-C, no. 6, pp. 1648-1655, June 1991, doi: .
Abstract: The nonstationary electron transports in the BP-SAINT GaAs MESFETs with submicron gate lengths have been studied under the various conditions at 300 K by an ensemble Monte Carlo simulation. It is shown that the calculated drain currents fairly agree with the experiments. It has been found that Wang's effective saturation velocity of electrons, which is defined as 0.8 Vmax, depends not only on the gate length, but alsos on the gate voltage, the drain voltage, and the doping concentration of the channel, where Vmax is the maximum velocity in the channel. The dependence of the effective saturation velocity upon a gradient of the electric field is discussed. The spatial distributions of the valley population ratio (or the effective mass for the effective-single valley model) and the kinetic energy of electrons under the gate are studied by the ensemble Monte Carlo method to evaluate the validity of the relaxation time approximation for these device simulations. It is shown that the effective mass cannot be always specified as a fuction of the mean energy only and that the kinetic energy is not negligibly small around the middle of the channel compared with the thermal energy.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e74-c_6_1648/_p
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@ARTICLE{e74-c_6_1648,
author={Yoshinori YAMADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Study on Nonstationary Electron Transport in Submicron BP-SAINT GaAs MESFETs Using an Ensemble Monte Carlo Simulation},
year={1991},
volume={E74-C},
number={6},
pages={1648-1655},
abstract={The nonstationary electron transports in the BP-SAINT GaAs MESFETs with submicron gate lengths have been studied under the various conditions at 300 K by an ensemble Monte Carlo simulation. It is shown that the calculated drain currents fairly agree with the experiments. It has been found that Wang's effective saturation velocity of electrons, which is defined as 0.8 Vmax, depends not only on the gate length, but alsos on the gate voltage, the drain voltage, and the doping concentration of the channel, where Vmax is the maximum velocity in the channel. The dependence of the effective saturation velocity upon a gradient of the electric field is discussed. The spatial distributions of the valley population ratio (or the effective mass for the effective-single valley model) and the kinetic energy of electrons under the gate are studied by the ensemble Monte Carlo method to evaluate the validity of the relaxation time approximation for these device simulations. It is shown that the effective mass cannot be always specified as a fuction of the mean energy only and that the kinetic energy is not negligibly small around the middle of the channel compared with the thermal energy.},
keywords={},
doi={},
ISSN={},
month={June},}
Copy
TY - JOUR
TI - A Study on Nonstationary Electron Transport in Submicron BP-SAINT GaAs MESFETs Using an Ensemble Monte Carlo Simulation
T2 - IEICE TRANSACTIONS on Electronics
SP - 1648
EP - 1655
AU - Yoshinori YAMADA
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1991
AB - The nonstationary electron transports in the BP-SAINT GaAs MESFETs with submicron gate lengths have been studied under the various conditions at 300 K by an ensemble Monte Carlo simulation. It is shown that the calculated drain currents fairly agree with the experiments. It has been found that Wang's effective saturation velocity of electrons, which is defined as 0.8 Vmax, depends not only on the gate length, but alsos on the gate voltage, the drain voltage, and the doping concentration of the channel, where Vmax is the maximum velocity in the channel. The dependence of the effective saturation velocity upon a gradient of the electric field is discussed. The spatial distributions of the valley population ratio (or the effective mass for the effective-single valley model) and the kinetic energy of electrons under the gate are studied by the ensemble Monte Carlo method to evaluate the validity of the relaxation time approximation for these device simulations. It is shown that the effective mass cannot be always specified as a fuction of the mean energy only and that the kinetic energy is not negligibly small around the middle of the channel compared with the thermal energy.
ER -
English
