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Phenomenological Interpretation of Low Frequency Current Oscillation in n+-AlxGa1-xAs/GaAs (x0.4) Modulation-Doped Heterostructures under High Electric Field at Low Temperatures

Takeshi KOBAYASHI, Tetsuro TAKAHASHI, Ken SAKUTA

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Summary :

We have found a low frequency current oscillation in the n+-AlxGa1-xAs/GaAs (x0.4) modulation-doped electron systems under high electric field applied at low temperatures (77 K or lower). This paper gives a possible explanation for this on the basis of an enhanced Real-Space-Transfer (RST) of two-dimensional carriers caused by the field crowding at the local region along the heterointerface. This model explained the observed low frequency current oscillation semi-quantitatively.

Publication
IEICE TRANSACTIONS on Electronics Vol.E74-C No.7 pp.2036-2041
Publication Date
1991/07/25
Publicized
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DOI
Type of Manuscript
Special Section PAPER (Special Issue on Low Temperature Electronics)
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