Isolation Characteristics in GaAs ICs on Semi-Insulating Substrate

Kazuyuki INOKUCHI; Yuko SEKINO-ITOH; Yoshiaki SANO

Isolation Characteristics in GaAs ICs on Semi-Insulating Substrate

Kazuyuki INOKUCHI, Yuko SEKINO-ITOH, Yoshiaki SANO

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Isolation characteristics, which are important factors in designing GaAs ICs, are investigated focusing on leak current between circuit elements on a semi-insulating substrate and on the sidegating effect that results from leak current between MESFETs. We have found that the large leak current comes from the projecting edge, located outside the channel, of the gate electrode and that this leak current is the main cause of the sidegating effect. By taking into account quantitatively evaluated isolation characteristics, we can improve LSI design rules to reproducible and reliable operation.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.10 pp.1154-1164

Publication Date: 1992/10/25

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Type of Manuscript: Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)

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Kazuyuki INOKUCHI, Yuko SEKINO-ITOH, Yoshiaki SANO, "Isolation Characteristics in GaAs ICs on Semi-Insulating Substrate" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 10, pp. 1154-1164, October 1992, doi: .
Abstract: Isolation characteristics, which are important factors in designing GaAs ICs, are investigated focusing on leak current between circuit elements on a semi-insulating substrate and on the sidegating effect that results from leak current between MESFETs. We have found that the large leak current comes from the projecting edge, located outside the channel, of the gate electrode and that this leak current is the main cause of the sidegating effect. By taking into account quantitatively evaluated isolation characteristics, we can improve LSI design rules to reproducible and reliable operation.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_10_1154/_p

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@ARTICLE{e75-c_10_1154,
author={Kazuyuki INOKUCHI, Yuko SEKINO-ITOH, Yoshiaki SANO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Isolation Characteristics in GaAs ICs on Semi-Insulating Substrate},
year={1992},
volume={E75-C},
number={10},
pages={1154-1164},
abstract={Isolation characteristics, which are important factors in designing GaAs ICs, are investigated focusing on leak current between circuit elements on a semi-insulating substrate and on the sidegating effect that results from leak current between MESFETs. We have found that the large leak current comes from the projecting edge, located outside the channel, of the gate electrode and that this leak current is the main cause of the sidegating effect. By taking into account quantitatively evaluated isolation characteristics, we can improve LSI design rules to reproducible and reliable operation.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - Isolation Characteristics in GaAs ICs on Semi-Insulating Substrate
T2 - IEICE TRANSACTIONS on Electronics
SP - 1154
EP - 1164
AU - Kazuyuki INOKUCHI
AU - Yuko SEKINO-ITOH
AU - Yoshiaki SANO
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 1992
AB - Isolation characteristics, which are important factors in designing GaAs ICs, are investigated focusing on leak current between circuit elements on a semi-insulating substrate and on the sidegating effect that results from leak current between MESFETs. We have found that the large leak current comes from the projecting edge, located outside the channel, of the gate electrode and that this leak current is the main cause of the sidegating effect. By taking into account quantitatively evaluated isolation characteristics, we can improve LSI design rules to reproducible and reliable operation.
ER -