The search functionality is under construction.
The search functionality is under construction.

Simulation of Stress Redistribution on LOCOS Structure during Oxidation and Subsequent Cooling Down

Shigeki KURODA, Kenji NISHI

  • Full Text Views

    0

  • Cite this

Summary :

This paper is concerned with the stress simulation of a LOCOS structure during not only oxidation but also the subsequent cooling down based on viscoelastic stress modeling. A viscoelastic model is successfully applied to the oxide, nitride and silicon substrate for a LOCOS structure. Thermal stress is also taken into account during the cooling down process. The viscoelastic deformation problem of all the three materials for the LOCOS structure are solved by a two-dimensional finite element method. It is the first time to show that the stress values after cooling down to room temperature are much higher than those right after oxidation. It is also shown that varying the cooling down rates results in the different stress values after cooling down.

Publication
IEICE TRANSACTIONS on Electronics Vol.E75-C No.2 pp.145-149
Publication Date
1992/02/25
Publicized
Online ISSN
DOI
Type of Manuscript
Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
Category

Authors

Keyword