This paper is concerned with the stress simulation of a LOCOS structure during not only oxidation but also the subsequent cooling down based on viscoelastic stress modeling. A viscoelastic model is successfully applied to the oxide, nitride and silicon substrate for a LOCOS structure. Thermal stress is also taken into account during the cooling down process. The viscoelastic deformation problem of all the three materials for the LOCOS structure are solved by a two-dimensional finite element method. It is the first time to show that the stress values after cooling down to room temperature are much higher than those right after oxidation. It is also shown that varying the cooling down rates results in the different stress values after cooling down.
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Shigeki KURODA, Kenji NISHI, "Simulation of Stress Redistribution on LOCOS Structure during Oxidation and Subsequent Cooling Down" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 2, pp. 145-149, February 1992, doi: .
Abstract: This paper is concerned with the stress simulation of a LOCOS structure during not only oxidation but also the subsequent cooling down based on viscoelastic stress modeling. A viscoelastic model is successfully applied to the oxide, nitride and silicon substrate for a LOCOS structure. Thermal stress is also taken into account during the cooling down process. The viscoelastic deformation problem of all the three materials for the LOCOS structure are solved by a two-dimensional finite element method. It is the first time to show that the stress values after cooling down to room temperature are much higher than those right after oxidation. It is also shown that varying the cooling down rates results in the different stress values after cooling down.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_2_145/_p
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@ARTICLE{e75-c_2_145,
author={Shigeki KURODA, Kenji NISHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Simulation of Stress Redistribution on LOCOS Structure during Oxidation and Subsequent Cooling Down},
year={1992},
volume={E75-C},
number={2},
pages={145-149},
abstract={This paper is concerned with the stress simulation of a LOCOS structure during not only oxidation but also the subsequent cooling down based on viscoelastic stress modeling. A viscoelastic model is successfully applied to the oxide, nitride and silicon substrate for a LOCOS structure. Thermal stress is also taken into account during the cooling down process. The viscoelastic deformation problem of all the three materials for the LOCOS structure are solved by a two-dimensional finite element method. It is the first time to show that the stress values after cooling down to room temperature are much higher than those right after oxidation. It is also shown that varying the cooling down rates results in the different stress values after cooling down.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Simulation of Stress Redistribution on LOCOS Structure during Oxidation and Subsequent Cooling Down
T2 - IEICE TRANSACTIONS on Electronics
SP - 145
EP - 149
AU - Shigeki KURODA
AU - Kenji NISHI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1992
AB - This paper is concerned with the stress simulation of a LOCOS structure during not only oxidation but also the subsequent cooling down based on viscoelastic stress modeling. A viscoelastic model is successfully applied to the oxide, nitride and silicon substrate for a LOCOS structure. Thermal stress is also taken into account during the cooling down process. The viscoelastic deformation problem of all the three materials for the LOCOS structure are solved by a two-dimensional finite element method. It is the first time to show that the stress values after cooling down to room temperature are much higher than those right after oxidation. It is also shown that varying the cooling down rates results in the different stress values after cooling down.
ER -