Hydrodynamic Modeling of Silicon BJT with Monte Carlo Calibrated Transport Coefficients
Summary :
A Monte Carlo calculation is performed to examine the transport coefficients of the electron gas under an inhomogeneous electric field. The expressions constructed from the M. C. results are then incorporated into the hydrodynamic formulation to calculate the internal characteristics of a silicon BJT device. The calculated results agree well with the Monte Carlo prediction.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E75-C No.2 pp.189-193
- Publication Date
- 1992/02/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
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Shin-Chi LEE, Ting-Wei TANG, "Hydrodynamic Modeling of Silicon BJT with Monte Carlo Calibrated Transport Coefficients" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 2, pp. 189-193, February 1992, doi: .
Abstract: A Monte Carlo calculation is performed to examine the transport coefficients of the electron gas under an inhomogeneous electric field. The expressions constructed from the M. C. results are then incorporated into the hydrodynamic formulation to calculate the internal characteristics of a silicon BJT device. The calculated results agree well with the Monte Carlo prediction.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_2_189/_p
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@ARTICLE{e75-c_2_189,
author={Shin-Chi LEE, Ting-Wei TANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Hydrodynamic Modeling of Silicon BJT with Monte Carlo Calibrated Transport Coefficients},
year={1992},
volume={E75-C},
number={2},
pages={189-193},
abstract={A Monte Carlo calculation is performed to examine the transport coefficients of the electron gas under an inhomogeneous electric field. The expressions constructed from the M. C. results are then incorporated into the hydrodynamic formulation to calculate the internal characteristics of a silicon BJT device. The calculated results agree well with the Monte Carlo prediction.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Hydrodynamic Modeling of Silicon BJT with Monte Carlo Calibrated Transport Coefficients
T2 - IEICE TRANSACTIONS on Electronics
SP - 189
EP - 193
AU - Shin-Chi LEE
AU - Ting-Wei TANG
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1992
AB - A Monte Carlo calculation is performed to examine the transport coefficients of the electron gas under an inhomogeneous electric field. The expressions constructed from the M. C. results are then incorporated into the hydrodynamic formulation to calculate the internal characteristics of a silicon BJT device. The calculated results agree well with the Monte Carlo prediction.
ER -
English
