This paper describes the design of a 38-GHz high power MMIC amplifier using an improved load-pull technique. We improved the load-pull technique accuracy by using MMIC transtormers to match the input and output impedances of a GaAs MESFET to about 50 ohms. We used this technique to measure the large-signal load impedance of a FET with a 600-µm-wide gate. Using the data obtained, we developed an MMIC amplifier composed of two of these FET cells. At 38 GHz, the amplifier has an output power of 23.5 dBm for a 1 dB gain compression level.
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Kazuo NAGATOMO, Shoichi KOIKE, Naofumi OKUBO, Masafumi SHIGAKI, "High-Power Millimeter Wave MMIC Amplifier Design Using Improved Load-Pull Method" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 6, pp. 663-668, June 1992, doi: .
Abstract: This paper describes the design of a 38-GHz high power MMIC amplifier using an improved load-pull technique. We improved the load-pull technique accuracy by using MMIC transtormers to match the input and output impedances of a GaAs MESFET to about 50 ohms. We used this technique to measure the large-signal load impedance of a FET with a 600-µm-wide gate. Using the data obtained, we developed an MMIC amplifier composed of two of these FET cells. At 38 GHz, the amplifier has an output power of 23.5 dBm for a 1 dB gain compression level.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_6_663/_p
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@ARTICLE{e75-c_6_663,
author={Kazuo NAGATOMO, Shoichi KOIKE, Naofumi OKUBO, Masafumi SHIGAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Power Millimeter Wave MMIC Amplifier Design Using Improved Load-Pull Method},
year={1992},
volume={E75-C},
number={6},
pages={663-668},
abstract={This paper describes the design of a 38-GHz high power MMIC amplifier using an improved load-pull technique. We improved the load-pull technique accuracy by using MMIC transtormers to match the input and output impedances of a GaAs MESFET to about 50 ohms. We used this technique to measure the large-signal load impedance of a FET with a 600-µm-wide gate. Using the data obtained, we developed an MMIC amplifier composed of two of these FET cells. At 38 GHz, the amplifier has an output power of 23.5 dBm for a 1 dB gain compression level.},
keywords={},
doi={},
ISSN={},
month={June},}
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TY - JOUR
TI - High-Power Millimeter Wave MMIC Amplifier Design Using Improved Load-Pull Method
T2 - IEICE TRANSACTIONS on Electronics
SP - 663
EP - 668
AU - Kazuo NAGATOMO
AU - Shoichi KOIKE
AU - Naofumi OKUBO
AU - Masafumi SHIGAKI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1992
AB - This paper describes the design of a 38-GHz high power MMIC amplifier using an improved load-pull technique. We improved the load-pull technique accuracy by using MMIC transtormers to match the input and output impedances of a GaAs MESFET to about 50 ohms. We used this technique to measure the large-signal load impedance of a FET with a 600-µm-wide gate. Using the data obtained, we developed an MMIC amplifier composed of two of these FET cells. At 38 GHz, the amplifier has an output power of 23.5 dBm for a 1 dB gain compression level.
ER -