A Millimeter-Wave Monolithic High Power Amplifier Using a Novel Tandem FET

Tadashi TAKAGI; Kiyoharu SEINO; Takuo KASHIWA; Tsutomu HASHIMOTO; Fumio TAKEDA

A Millimeter-Wave Monolithic High Power Amplifier Using a Novel Tandem FET

Tadashi TAKAGI, Kiyoharu SEINO, Takuo KASHIWA, Tsutomu HASHIMOTO, Fumio TAKEDA

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A Ka-band 0.5 W monolithic amplifier using a novel tandem FET has been developed. The tandem FET consists of two FET cells connected in series through a short transmission line. The features of the tandem FET are high gain, flat gain response and miniaturized size. The tandem FET is very useful for obtaining high gain, high power amplifiers operating in millimeter-wave region where combining and matching circuits' losses are significantly large. By combining four tandem FETs, a linear gain of 4.5 dB, a 1 dB compressed power of 26.3 dBm and a saturated output power of 27.3 dBm (0.54 W) have been achieved at 37 GHz. The size of the amplifier is 1.73.20.03^t mm.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.6 pp.669-673

Publication Date: 1992/06/25

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Type of Manuscript: Special Section PAPER (Special Issue on MMIC Technology)

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Tadashi TAKAGI, Kiyoharu SEINO, Takuo KASHIWA, Tsutomu HASHIMOTO, Fumio TAKEDA, "A Millimeter-Wave Monolithic High Power Amplifier Using a Novel Tandem FET" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 6, pp. 669-673, June 1992, doi: .
Abstract: A Ka-band 0.5 W monolithic amplifier using a novel tandem FET has been developed. The tandem FET consists of two FET cells connected in series through a short transmission line. The features of the tandem FET are high gain, flat gain response and miniaturized size. The tandem FET is very useful for obtaining high gain, high power amplifiers operating in millimeter-wave region where combining and matching circuits' losses are significantly large. By combining four tandem FETs, a linear gain of 4.5 dB, a 1 dB compressed power of 26.3 dBm and a saturated output power of 27.3 dBm (0.54 W) have been achieved at 37 GHz. The size of the amplifier is 1.73.20.03^t mm.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_6_669/_p

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@ARTICLE{e75-c_6_669,
author={Tadashi TAKAGI, Kiyoharu SEINO, Takuo KASHIWA, Tsutomu HASHIMOTO, Fumio TAKEDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Millimeter-Wave Monolithic High Power Amplifier Using a Novel Tandem FET},
year={1992},
volume={E75-C},
number={6},
pages={669-673},
abstract={A Ka-band 0.5 W monolithic amplifier using a novel tandem FET has been developed. The tandem FET consists of two FET cells connected in series through a short transmission line. The features of the tandem FET are high gain, flat gain response and miniaturized size. The tandem FET is very useful for obtaining high gain, high power amplifiers operating in millimeter-wave region where combining and matching circuits' losses are significantly large. By combining four tandem FETs, a linear gain of 4.5 dB, a 1 dB compressed power of 26.3 dBm and a saturated output power of 27.3 dBm (0.54 W) have been achieved at 37 GHz. The size of the amplifier is 1.73.20.03^t mm.},
keywords={},
doi={},
ISSN={},
month={June},}

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TY - JOUR
TI - A Millimeter-Wave Monolithic High Power Amplifier Using a Novel Tandem FET
T2 - IEICE TRANSACTIONS on Electronics
SP - 669
EP - 673
AU - Tadashi TAKAGI
AU - Kiyoharu SEINO
AU - Takuo KASHIWA
AU - Tsutomu HASHIMOTO
AU - Fumio TAKEDA
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1992
AB - A Ka-band 0.5 W monolithic amplifier using a novel tandem FET has been developed. The tandem FET consists of two FET cells connected in series through a short transmission line. The features of the tandem FET are high gain, flat gain response and miniaturized size. The tandem FET is very useful for obtaining high gain, high power amplifiers operating in millimeter-wave region where combining and matching circuits' losses are significantly large. By combining four tandem FETs, a linear gain of 4.5 dB, a 1 dB compressed power of 26.3 dBm and a saturated output power of 27.3 dBm (0.54 W) have been achieved at 37 GHz. The size of the amplifier is 1.73.20.03^t mm.
ER -