Chemical Structures of Native Oxides Formed during Wet Chemical Treatments of Silicon Surfaces

Hiroki OGAWA; Takeo HATTORI

Chemical Structures of Native Oxides Formed during Wet Chemical Treatments of Silicon Surfaces

Hiroki OGAWA, Takeo HATTORI

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Chemical structures of native oxides formed during wet chemical treatments of silicon surfaces were investigated using X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed Infrared. Attenuated Total Reflection (FT-IR-ATR). It was found that the amounts of Si-H bonds in native oxide and at native oxide/ silicon interface are negligibly small in the case of native oxides formed in H₂SO₄-H₂O₂ solution. Based on this discovery, it was found that native oxides can be characterized by the amount of Si-H bonds in the native oxide and the combination of various wet chemical treatments with the treatment in NH₄OH-H₂O₂-H₂O solution results in the drastic decrease in the amount of Si-H bonds in the native oxides.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.7 pp.774-780

Publication Date: 1992/07/25

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Type of Manuscript: Special Section PAPER (Special Issue on Ultra Clean Technology)

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Hiroki OGAWA, Takeo HATTORI, "Chemical Structures of Native Oxides Formed during Wet Chemical Treatments of Silicon Surfaces" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 7, pp. 774-780, July 1992, doi: .
Abstract: Chemical structures of native oxides formed during wet chemical treatments of silicon surfaces were investigated using X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed Infrared. Attenuated Total Reflection (FT-IR-ATR). It was found that the amounts of Si-H bonds in native oxide and at native oxide/ silicon interface are negligibly small in the case of native oxides formed in H₂SO₄-H₂O₂ solution. Based on this discovery, it was found that native oxides can be characterized by the amount of Si-H bonds in the native oxide and the combination of various wet chemical treatments with the treatment in NH₄OH-H₂O₂-H₂O solution results in the drastic decrease in the amount of Si-H bonds in the native oxides.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_7_774/_p

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@ARTICLE{e75-c_7_774,
author={Hiroki OGAWA, Takeo HATTORI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Chemical Structures of Native Oxides Formed during Wet Chemical Treatments of Silicon Surfaces},
year={1992},
volume={E75-C},
number={7},
pages={774-780},
abstract={Chemical structures of native oxides formed during wet chemical treatments of silicon surfaces were investigated using X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed Infrared. Attenuated Total Reflection (FT-IR-ATR). It was found that the amounts of Si-H bonds in native oxide and at native oxide/ silicon interface are negligibly small in the case of native oxides formed in H₂SO₄-H₂O₂ solution. Based on this discovery, it was found that native oxides can be characterized by the amount of Si-H bonds in the native oxide and the combination of various wet chemical treatments with the treatment in NH₄OH-H₂O₂-H₂O solution results in the drastic decrease in the amount of Si-H bonds in the native oxides.},
keywords={},
doi={},
ISSN={},
month={July},}

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TY - JOUR
TI - Chemical Structures of Native Oxides Formed during Wet Chemical Treatments of Silicon Surfaces
T2 - IEICE TRANSACTIONS on Electronics
SP - 774
EP - 780
AU - Hiroki OGAWA
AU - Takeo HATTORI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1992
AB - Chemical structures of native oxides formed during wet chemical treatments of silicon surfaces were investigated using X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed Infrared. Attenuated Total Reflection (FT-IR-ATR). It was found that the amounts of Si-H bonds in native oxide and at native oxide/ silicon interface are negligibly small in the case of native oxides formed in H₂SO₄-H₂O₂ solution. Based on this discovery, it was found that native oxides can be characterized by the amount of Si-H bonds in the native oxide and the combination of various wet chemical treatments with the treatment in NH₄OH-H₂O₂-H₂O solution results in the drastic decrease in the amount of Si-H bonds in the native oxides.
ER -