Synchrotron Radiation Stimulated Evaporation of a-SiO2 Films and Its Application for Si Surface Cleaning
Summary :
Synchrotron radiation (SR) irradiation of amorphous SiO2 (a-SiO2) induces continuous removal of the SiO2 film without the use of etching gas. The dependence of the photostimulated evaporation rate on substrate temperature and SR intensity was measured and the reaction mechanism is discussed in detail separately for surface and bulk. Using the high material selectivity of the Sr-stimulated evaporation, a sefl-aligned process to fabricate a 0.6 µm line-and-space pattern is presented. Si surface cleaning is demonstrated as an example of application of this reaction to thin native oxide film grown by wet pretreatment. Si(100)-2
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- IEICE TRANSACTIONS on Electronics Vol.E75-C No.7 pp.781-789
- Publication Date
- 1992/07/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on Ultra Clean Technology)
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Housei AKAZAWA, Yuichi UTSUMI, Jun-ichi TAKAHASHI, Tsuneo URISU, "Synchrotron Radiation Stimulated Evaporation of a-SiO2 Films and Its Application for Si Surface Cleaning" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 7, pp. 781-789, July 1992, doi: .
Abstract: Synchrotron radiation (SR) irradiation of amorphous SiO2 (a-SiO2) induces continuous removal of the SiO2 film without the use of etching gas. The dependence of the photostimulated evaporation rate on substrate temperature and SR intensity was measured and the reaction mechanism is discussed in detail separately for surface and bulk. Using the high material selectivity of the Sr-stimulated evaporation, a sefl-aligned process to fabricate a 0.6 µm line-and-space pattern is presented. Si surface cleaning is demonstrated as an example of application of this reaction to thin native oxide film grown by wet pretreatment. Si(100)-2
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_7_781/_p
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@ARTICLE{e75-c_7_781,
author={Housei AKAZAWA, Yuichi UTSUMI, Jun-ichi TAKAHASHI, Tsuneo URISU, },
journal={IEICE TRANSACTIONS on Electronics},
title={Synchrotron Radiation Stimulated Evaporation of a-SiO2 Films and Its Application for Si Surface Cleaning},
year={1992},
volume={E75-C},
number={7},
pages={781-789},
abstract={Synchrotron radiation (SR) irradiation of amorphous SiO2 (a-SiO2) induces continuous removal of the SiO2 film without the use of etching gas. The dependence of the photostimulated evaporation rate on substrate temperature and SR intensity was measured and the reaction mechanism is discussed in detail separately for surface and bulk. Using the high material selectivity of the Sr-stimulated evaporation, a sefl-aligned process to fabricate a 0.6 µm line-and-space pattern is presented. Si surface cleaning is demonstrated as an example of application of this reaction to thin native oxide film grown by wet pretreatment. Si(100)-2
keywords={},
doi={},
ISSN={},
month={July},}
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TY - JOUR
TI - Synchrotron Radiation Stimulated Evaporation of a-SiO2 Films and Its Application for Si Surface Cleaning
T2 - IEICE TRANSACTIONS on Electronics
SP - 781
EP - 789
AU - Housei AKAZAWA
AU - Yuichi UTSUMI
AU - Jun-ichi TAKAHASHI
AU - Tsuneo URISU
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1992
AB - Synchrotron radiation (SR) irradiation of amorphous SiO2 (a-SiO2) induces continuous removal of the SiO2 film without the use of etching gas. The dependence of the photostimulated evaporation rate on substrate temperature and SR intensity was measured and the reaction mechanism is discussed in detail separately for surface and bulk. Using the high material selectivity of the Sr-stimulated evaporation, a sefl-aligned process to fabricate a 0.6 µm line-and-space pattern is presented. Si surface cleaning is demonstrated as an example of application of this reaction to thin native oxide film grown by wet pretreatment. Si(100)-2
ER -
English
