Effects of Cleaning by Sulfuric Acid and Hydroperoxide Mixture on Thin SiO2 Film Properties
Summary :
Effects of cleaning by H2SO4: H2O2 on thin SiO2 film was investigated. The cleaning increases Fowler-Nordheim currents by about 14%, shifts the dielectric breakdown distribution to lower electric field intensity and degrades TDDB characteristics. These results are due to the oxidation and commensurate roughening of the silicon srface by the cleaning solution. When the cleaning is done at higher temperature and with higher concentration of hydroperoxide, microroughness of silicon surface increases. Therfore, the trade-off between the cleaning effect and the roughening effect of H2SO4: H2O2 should be found out.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E75-C No.7 pp.796-799
- Publication Date
- 1992/07/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on Ultra Clean Technology)
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Masashi MAEKAWA, Shigeo OHNISHI, Keizo SAKIYAMA, "Effects of Cleaning by Sulfuric Acid and Hydroperoxide Mixture on Thin SiO2 Film Properties" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 7, pp. 796-799, July 1992, doi: .
Abstract: Effects of cleaning by H2SO4: H2O2 on thin SiO2 film was investigated. The cleaning increases Fowler-Nordheim currents by about 14%, shifts the dielectric breakdown distribution to lower electric field intensity and degrades TDDB characteristics. These results are due to the oxidation and commensurate roughening of the silicon srface by the cleaning solution. When the cleaning is done at higher temperature and with higher concentration of hydroperoxide, microroughness of silicon surface increases. Therfore, the trade-off between the cleaning effect and the roughening effect of H2SO4: H2O2 should be found out.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_7_796/_p
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@ARTICLE{e75-c_7_796,
author={Masashi MAEKAWA, Shigeo OHNISHI, Keizo SAKIYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effects of Cleaning by Sulfuric Acid and Hydroperoxide Mixture on Thin SiO2 Film Properties},
year={1992},
volume={E75-C},
number={7},
pages={796-799},
abstract={Effects of cleaning by H2SO4: H2O2 on thin SiO2 film was investigated. The cleaning increases Fowler-Nordheim currents by about 14%, shifts the dielectric breakdown distribution to lower electric field intensity and degrades TDDB characteristics. These results are due to the oxidation and commensurate roughening of the silicon srface by the cleaning solution. When the cleaning is done at higher temperature and with higher concentration of hydroperoxide, microroughness of silicon surface increases. Therfore, the trade-off between the cleaning effect and the roughening effect of H2SO4: H2O2 should be found out.},
keywords={},
doi={},
ISSN={},
month={July},}
Copy
TY - JOUR
TI - Effects of Cleaning by Sulfuric Acid and Hydroperoxide Mixture on Thin SiO2 Film Properties
T2 - IEICE TRANSACTIONS on Electronics
SP - 796
EP - 799
AU - Masashi MAEKAWA
AU - Shigeo OHNISHI
AU - Keizo SAKIYAMA
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1992
AB - Effects of cleaning by H2SO4: H2O2 on thin SiO2 film was investigated. The cleaning increases Fowler-Nordheim currents by about 14%, shifts the dielectric breakdown distribution to lower electric field intensity and degrades TDDB characteristics. These results are due to the oxidation and commensurate roughening of the silicon srface by the cleaning solution. When the cleaning is done at higher temperature and with higher concentration of hydroperoxide, microroughness of silicon surface increases. Therfore, the trade-off between the cleaning effect and the roughening effect of H2SO4: H2O2 should be found out.
ER -
English
