We have developed a new method of evaluating Si suface micro-roughness, by forming thin oxide in HCl/H2O2 solution and then measuring the concentration of chlorine atomes and the total charge in this oxide. It is shown that this oxide does not affect the surface micro-roughness, and the surface concentration of chlorine atoms incorporated in this oxide and the total oxide charge are proportional to the surface microroughness, obtained by AFM. From this correlation, it is possible to evaluate the surface micro-roughness for large areas compared with the areas of AFM measurement.
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Ichiro OKI, Tetsuo BIWA, Jun KUDO, Hikou SHIBAYAMA, "Evaluation of Si Surface Micro-Roughness by Measuring Chlorine Concentration and Total Charge of Native Oxide" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 7, pp. 809-811, July 1992, doi: .
Abstract: We have developed a new method of evaluating Si suface micro-roughness, by forming thin oxide in HCl/H2O2 solution and then measuring the concentration of chlorine atomes and the total charge in this oxide. It is shown that this oxide does not affect the surface micro-roughness, and the surface concentration of chlorine atoms incorporated in this oxide and the total oxide charge are proportional to the surface microroughness, obtained by AFM. From this correlation, it is possible to evaluate the surface micro-roughness for large areas compared with the areas of AFM measurement.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_7_809/_p
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@ARTICLE{e75-c_7_809,
author={Ichiro OKI, Tetsuo BIWA, Jun KUDO, Hikou SHIBAYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Evaluation of Si Surface Micro-Roughness by Measuring Chlorine Concentration and Total Charge of Native Oxide},
year={1992},
volume={E75-C},
number={7},
pages={809-811},
abstract={We have developed a new method of evaluating Si suface micro-roughness, by forming thin oxide in HCl/H2O2 solution and then measuring the concentration of chlorine atomes and the total charge in this oxide. It is shown that this oxide does not affect the surface micro-roughness, and the surface concentration of chlorine atoms incorporated in this oxide and the total oxide charge are proportional to the surface microroughness, obtained by AFM. From this correlation, it is possible to evaluate the surface micro-roughness for large areas compared with the areas of AFM measurement.},
keywords={},
doi={},
ISSN={},
month={July},}
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TY - JOUR
TI - Evaluation of Si Surface Micro-Roughness by Measuring Chlorine Concentration and Total Charge of Native Oxide
T2 - IEICE TRANSACTIONS on Electronics
SP - 809
EP - 811
AU - Ichiro OKI
AU - Tetsuo BIWA
AU - Jun KUDO
AU - Hikou SHIBAYAMA
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1992
AB - We have developed a new method of evaluating Si suface micro-roughness, by forming thin oxide in HCl/H2O2 solution and then measuring the concentration of chlorine atomes and the total charge in this oxide. It is shown that this oxide does not affect the surface micro-roughness, and the surface concentration of chlorine atoms incorporated in this oxide and the total oxide charge are proportional to the surface microroughness, obtained by AFM. From this correlation, it is possible to evaluate the surface micro-roughness for large areas compared with the areas of AFM measurement.
ER -