A New Cleaning Solution for Metallic Impurities on the Silicon Wafer Surface

Tsugio SHIMONO; Mikio TSUJI

A New Cleaning Solution for Metallic Impurities on the Silicon Wafer Surface

Tsugio SHIMONO, Mikio TSUJI

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A new cleaning solution (FPM; HF-H₂O₂-H₂O) was investigated in order to remove effectively metallic impurities on the silicon wafer surface. The removability of metallic impurities on the wafer surface and the concentrations of metallic impurities adsorbed on the wafer surface from each contaminated cleaning solution were compared between FPM and conventional cleaning solutions, such as HPM (HCl-H₂O₂-H₂O), SPM (H₂SO₄-H₂O₂), DHF (HF-H₂O) and APM (NH₄OH-H₂O₂-H₂O). This new cleaning solution had higher removability of metallic impurities than conventional ones. Adsorption of some kinds of metallic impurities onto the wafer surface was a serious problem for conventional cleaning solutions. This problem was solved by the use of FPM. FPM was important not only as a cleaning solution for metallic impurities, but also as an etchant. Furthemore, this new cleaning solution made possible to construct a simple cleaning system, because the concentrations of HF and H₂O₂ are good to be less than 1% for each, and it can be used at room temperature.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.7 pp.812-815

Publication Date: 1992/07/25

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Type of Manuscript: Special Section PAPER (Special Issue on Ultra Clean Technology)

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Tsugio SHIMONO, Mikio TSUJI, "A New Cleaning Solution for Metallic Impurities on the Silicon Wafer Surface" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 7, pp. 812-815, July 1992, doi: .
Abstract: A new cleaning solution (FPM; HF-H₂O₂-H₂O) was investigated in order to remove effectively metallic impurities on the silicon wafer surface. The removability of metallic impurities on the wafer surface and the concentrations of metallic impurities adsorbed on the wafer surface from each contaminated cleaning solution were compared between FPM and conventional cleaning solutions, such as HPM (HCl-H₂O₂-H₂O), SPM (H₂SO₄-H₂O₂), DHF (HF-H₂O) and APM (NH₄OH-H₂O₂-H₂O). This new cleaning solution had higher removability of metallic impurities than conventional ones. Adsorption of some kinds of metallic impurities onto the wafer surface was a serious problem for conventional cleaning solutions. This problem was solved by the use of FPM. FPM was important not only as a cleaning solution for metallic impurities, but also as an etchant. Furthemore, this new cleaning solution made possible to construct a simple cleaning system, because the concentrations of HF and H₂O₂ are good to be less than 1% for each, and it can be used at room temperature.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_7_812/_p

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@ARTICLE{e75-c_7_812,
author={Tsugio SHIMONO, Mikio TSUJI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A New Cleaning Solution for Metallic Impurities on the Silicon Wafer Surface},
year={1992},
volume={E75-C},
number={7},
pages={812-815},
abstract={A new cleaning solution (FPM; HF-H₂O₂-H₂O) was investigated in order to remove effectively metallic impurities on the silicon wafer surface. The removability of metallic impurities on the wafer surface and the concentrations of metallic impurities adsorbed on the wafer surface from each contaminated cleaning solution were compared between FPM and conventional cleaning solutions, such as HPM (HCl-H₂O₂-H₂O), SPM (H₂SO₄-H₂O₂), DHF (HF-H₂O) and APM (NH₄OH-H₂O₂-H₂O). This new cleaning solution had higher removability of metallic impurities than conventional ones. Adsorption of some kinds of metallic impurities onto the wafer surface was a serious problem for conventional cleaning solutions. This problem was solved by the use of FPM. FPM was important not only as a cleaning solution for metallic impurities, but also as an etchant. Furthemore, this new cleaning solution made possible to construct a simple cleaning system, because the concentrations of HF and H₂O₂ are good to be less than 1% for each, and it can be used at room temperature.},
keywords={},
doi={},
ISSN={},
month={July},}

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TY - JOUR
TI - A New Cleaning Solution for Metallic Impurities on the Silicon Wafer Surface
T2 - IEICE TRANSACTIONS on Electronics
SP - 812
EP - 815
AU - Tsugio SHIMONO
AU - Mikio TSUJI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1992
AB - A new cleaning solution (FPM; HF-H₂O₂-H₂O) was investigated in order to remove effectively metallic impurities on the silicon wafer surface. The removability of metallic impurities on the wafer surface and the concentrations of metallic impurities adsorbed on the wafer surface from each contaminated cleaning solution were compared between FPM and conventional cleaning solutions, such as HPM (HCl-H₂O₂-H₂O), SPM (H₂SO₄-H₂O₂), DHF (HF-H₂O) and APM (NH₄OH-H₂O₂-H₂O). This new cleaning solution had higher removability of metallic impurities than conventional ones. Adsorption of some kinds of metallic impurities onto the wafer surface was a serious problem for conventional cleaning solutions. This problem was solved by the use of FPM. FPM was important not only as a cleaning solution for metallic impurities, but also as an etchant. Furthemore, this new cleaning solution made possible to construct a simple cleaning system, because the concentrations of HF and H₂O₂ are good to be less than 1% for each, and it can be used at room temperature.
ER -