It is crucial to make Si wafer surfaces ultraclean in order to realize such advanced processes as the low-temperature process and the high-selectivity in the ULSI production. The ultra clean wafer surface must be perfectly free from particles, organic materials, metallic impurities, native oxide, surface microroughness, and adsorbed molecule impurities. Since the metallic contamination on the wafer surface, which is one of the major contaminants to be overcome in order to come up with the ultra clean wafer surface, has the fatal effect on the device characteristics, the metallic impurities in the wafer surface must be suppressed at least below 1010 atoms/cm2. Meanwhile the current dry processes such as reactive ion etching or ion implantation, suffer the metallic contamination of 1012
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Takashi IMAOKA, Takehiko KEZUKA, Jun TAKANO, Isamu SUGIYAMA, Tadahiro OHMI, "The Segregation and Removal of Metallic Impurities at the Interface of Silicon Wafer Surface and Liquid Chemicals" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 7, pp. 816-828, July 1992, doi: .
Abstract: It is crucial to make Si wafer surfaces ultraclean in order to realize such advanced processes as the low-temperature process and the high-selectivity in the ULSI production. The ultra clean wafer surface must be perfectly free from particles, organic materials, metallic impurities, native oxide, surface microroughness, and adsorbed molecule impurities. Since the metallic contamination on the wafer surface, which is one of the major contaminants to be overcome in order to come up with the ultra clean wafer surface, has the fatal effect on the device characteristics, the metallic impurities in the wafer surface must be suppressed at least below 1010 atoms/cm2. Meanwhile the current dry processes such as reactive ion etching or ion implantation, suffer the metallic contamination of 1012
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_7_816/_p
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@ARTICLE{e75-c_7_816,
author={Takashi IMAOKA, Takehiko KEZUKA, Jun TAKANO, Isamu SUGIYAMA, Tadahiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={The Segregation and Removal of Metallic Impurities at the Interface of Silicon Wafer Surface and Liquid Chemicals},
year={1992},
volume={E75-C},
number={7},
pages={816-828},
abstract={It is crucial to make Si wafer surfaces ultraclean in order to realize such advanced processes as the low-temperature process and the high-selectivity in the ULSI production. The ultra clean wafer surface must be perfectly free from particles, organic materials, metallic impurities, native oxide, surface microroughness, and adsorbed molecule impurities. Since the metallic contamination on the wafer surface, which is one of the major contaminants to be overcome in order to come up with the ultra clean wafer surface, has the fatal effect on the device characteristics, the metallic impurities in the wafer surface must be suppressed at least below 1010 atoms/cm2. Meanwhile the current dry processes such as reactive ion etching or ion implantation, suffer the metallic contamination of 1012
keywords={},
doi={},
ISSN={},
month={July},}
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TY - JOUR
TI - The Segregation and Removal of Metallic Impurities at the Interface of Silicon Wafer Surface and Liquid Chemicals
T2 - IEICE TRANSACTIONS on Electronics
SP - 816
EP - 828
AU - Takashi IMAOKA
AU - Takehiko KEZUKA
AU - Jun TAKANO
AU - Isamu SUGIYAMA
AU - Tadahiro OHMI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1992
AB - It is crucial to make Si wafer surfaces ultraclean in order to realize such advanced processes as the low-temperature process and the high-selectivity in the ULSI production. The ultra clean wafer surface must be perfectly free from particles, organic materials, metallic impurities, native oxide, surface microroughness, and adsorbed molecule impurities. Since the metallic contamination on the wafer surface, which is one of the major contaminants to be overcome in order to come up with the ultra clean wafer surface, has the fatal effect on the device characteristics, the metallic impurities in the wafer surface must be suppressed at least below 1010 atoms/cm2. Meanwhile the current dry processes such as reactive ion etching or ion implantation, suffer the metallic contamination of 1012
ER -