IEICE TRANSACTIONS on Electronics
Deposition of High-Quality Silicon Dioxide by Remote Plasma CVD Technique
Summary :
Reaction mechanisms in remote plasma CVD (in which plasma excitation of source meterials and film deposition are spatially separated) of SiO2 using activated oxygen species and pure silane (SiH4) were discussed in two destinct cases in a viewpoint of vapor phase reactions. Under high pressures of 50
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E75-C No.9 pp.1013-1018
- Publication Date
- 1992/09/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Silicon Devices and Materials)
- Category
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Takashi FUYUKI, Takeshi FURUKAWA, Tohru OKA, Hiroyuki MATSUNAMI, "Deposition of High-Quality Silicon Dioxide by Remote Plasma CVD Technique" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 9, pp. 1013-1018, September 1992, doi: .
Abstract: Reaction mechanisms in remote plasma CVD (in which plasma excitation of source meterials and film deposition are spatially separated) of SiO2 using activated oxygen species and pure silane (SiH4) were discussed in two destinct cases in a viewpoint of vapor phase reactions. Under high pressures of 50
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_9_1013/_p
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@ARTICLE{e75-c_9_1013,
author={Takashi FUYUKI, Takeshi FURUKAWA, Tohru OKA, Hiroyuki MATSUNAMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Deposition of High-Quality Silicon Dioxide by Remote Plasma CVD Technique},
year={1992},
volume={E75-C},
number={9},
pages={1013-1018},
abstract={Reaction mechanisms in remote plasma CVD (in which plasma excitation of source meterials and film deposition are spatially separated) of SiO2 using activated oxygen species and pure silane (SiH4) were discussed in two destinct cases in a viewpoint of vapor phase reactions. Under high pressures of 50
keywords={},
doi={},
ISSN={},
month={September},}
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TY - JOUR
TI - Deposition of High-Quality Silicon Dioxide by Remote Plasma CVD Technique
T2 - IEICE TRANSACTIONS on Electronics
SP - 1013
EP - 1018
AU - Takashi FUYUKI
AU - Takeshi FURUKAWA
AU - Tohru OKA
AU - Hiroyuki MATSUNAMI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1992
AB - Reaction mechanisms in remote plasma CVD (in which plasma excitation of source meterials and film deposition are spatially separated) of SiO2 using activated oxygen species and pure silane (SiH4) were discussed in two destinct cases in a viewpoint of vapor phase reactions. Under high pressures of 50
ER -
English
