Microcrystalline Silicon in Oxide Matrix Prepared from Partial Oxidation of Anodized Porous Silicon
Summary :
Microcrystalline silicon embedded in silicon oxide has been prepared by means of a wet oxidation of porous silicon (PS) anodically produced from degenerate Si wafers in a HF solution. As the oxidation proceeded, optical absorptions of the PS specimen in the visible light region shifted obviously to the higher energy side. Visible light emission from the oxidized specimen was observed at room temperature with photoexcitation by a He-Cd laser while the as-prepared specimen emitted no visible lights. These results are discussed in relation to the quantum size effect of the microcrystalline silicon confined in the oxide matrix as well as visible emissions from as-prepared specimens produced from non-degenerate Si wafers.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E75-C No.9 pp.1025-1030
- Publication Date
- 1992/09/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Silicon Devices and Materials)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Toshimichi OHTA, Osamu ARAKAKI, Toshimichi ITO, Akio HIRAKI, "Microcrystalline Silicon in Oxide Matrix Prepared from Partial Oxidation of Anodized Porous Silicon" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 9, pp. 1025-1030, September 1992, doi: .
Abstract: Microcrystalline silicon embedded in silicon oxide has been prepared by means of a wet oxidation of porous silicon (PS) anodically produced from degenerate Si wafers in a HF solution. As the oxidation proceeded, optical absorptions of the PS specimen in the visible light region shifted obviously to the higher energy side. Visible light emission from the oxidized specimen was observed at room temperature with photoexcitation by a He-Cd laser while the as-prepared specimen emitted no visible lights. These results are discussed in relation to the quantum size effect of the microcrystalline silicon confined in the oxide matrix as well as visible emissions from as-prepared specimens produced from non-degenerate Si wafers.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_9_1025/_p
Copy
@ARTICLE{e75-c_9_1025,
author={Toshimichi OHTA, Osamu ARAKAKI, Toshimichi ITO, Akio HIRAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Microcrystalline Silicon in Oxide Matrix Prepared from Partial Oxidation of Anodized Porous Silicon},
year={1992},
volume={E75-C},
number={9},
pages={1025-1030},
abstract={Microcrystalline silicon embedded in silicon oxide has been prepared by means of a wet oxidation of porous silicon (PS) anodically produced from degenerate Si wafers in a HF solution. As the oxidation proceeded, optical absorptions of the PS specimen in the visible light region shifted obviously to the higher energy side. Visible light emission from the oxidized specimen was observed at room temperature with photoexcitation by a He-Cd laser while the as-prepared specimen emitted no visible lights. These results are discussed in relation to the quantum size effect of the microcrystalline silicon confined in the oxide matrix as well as visible emissions from as-prepared specimens produced from non-degenerate Si wafers.},
keywords={},
doi={},
ISSN={},
month={September},}
Copy
TY - JOUR
TI - Microcrystalline Silicon in Oxide Matrix Prepared from Partial Oxidation of Anodized Porous Silicon
T2 - IEICE TRANSACTIONS on Electronics
SP - 1025
EP - 1030
AU - Toshimichi OHTA
AU - Osamu ARAKAKI
AU - Toshimichi ITO
AU - Akio HIRAKI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1992
AB - Microcrystalline silicon embedded in silicon oxide has been prepared by means of a wet oxidation of porous silicon (PS) anodically produced from degenerate Si wafers in a HF solution. As the oxidation proceeded, optical absorptions of the PS specimen in the visible light region shifted obviously to the higher energy side. Visible light emission from the oxidized specimen was observed at room temperature with photoexcitation by a He-Cd laser while the as-prepared specimen emitted no visible lights. These results are discussed in relation to the quantum size effect of the microcrystalline silicon confined in the oxide matrix as well as visible emissions from as-prepared specimens produced from non-degenerate Si wafers.
ER -
English
