Semiconductor Optical Modulator by Using Electron Depleting Absorption Control

Minoru YAMADA; Kazuhiro NODA; Yuji KUWAMURA; Hirohumi NAKANISHI; Kiyohumi IMAI

Semiconductor Optical Modulator by Using Electron Depleting Absorption Control

Minoru YAMADA, Kazuhiro NODA, Yuji KUWAMURA, Hirohumi NAKANISHI, Kiyohumi IMAI

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Operation of a newly proposed semiconductor optical modulator based on absorption control by electron depletion around a p-n junction is demonstrated, forming preliminary structures of waveguide-type as well as panel-type (or surface-illuminated type) devices. The optical absorption is occurred at the intrinsic energy levels in the band structure not at the extended state into the band-gap. Performance of 35 dB on-off extinction ratio for 4 V variation of the applied voltage was obtained in a waveguide type device. Validity of the proposed mechanism were confirmed by getting large change of the absorption coefficient of around 5000 cm^-1 over wide wavelength range of 30 nm.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.9 pp.1063-1070

Publication Date: 1992/09/25

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Type of Manuscript: PAPER

Category: Opto-Electronics

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Minoru YAMADA, Kazuhiro NODA, Yuji KUWAMURA, Hirohumi NAKANISHI, Kiyohumi IMAI, "Semiconductor Optical Modulator by Using Electron Depleting Absorption Control" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 9, pp. 1063-1070, September 1992, doi: .
Abstract: Operation of a newly proposed semiconductor optical modulator based on absorption control by electron depletion around a p-n junction is demonstrated, forming preliminary structures of waveguide-type as well as panel-type (or surface-illuminated type) devices. The optical absorption is occurred at the intrinsic energy levels in the band structure not at the extended state into the band-gap. Performance of 35 dB on-off extinction ratio for 4 V variation of the applied voltage was obtained in a waveguide type device. Validity of the proposed mechanism were confirmed by getting large change of the absorption coefficient of around 5000 cm^-1 over wide wavelength range of 30 nm.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_9_1063/_p

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@ARTICLE{e75-c_9_1063,
author={Minoru YAMADA, Kazuhiro NODA, Yuji KUWAMURA, Hirohumi NAKANISHI, Kiyohumi IMAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Semiconductor Optical Modulator by Using Electron Depleting Absorption Control},
year={1992},
volume={E75-C},
number={9},
pages={1063-1070},
abstract={Operation of a newly proposed semiconductor optical modulator based on absorption control by electron depletion around a p-n junction is demonstrated, forming preliminary structures of waveguide-type as well as panel-type (or surface-illuminated type) devices. The optical absorption is occurred at the intrinsic energy levels in the band structure not at the extended state into the band-gap. Performance of 35 dB on-off extinction ratio for 4 V variation of the applied voltage was obtained in a waveguide type device. Validity of the proposed mechanism were confirmed by getting large change of the absorption coefficient of around 5000 cm^-1 over wide wavelength range of 30 nm.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - Semiconductor Optical Modulator by Using Electron Depleting Absorption Control
T2 - IEICE TRANSACTIONS on Electronics
SP - 1063
EP - 1070
AU - Minoru YAMADA
AU - Kazuhiro NODA
AU - Yuji KUWAMURA
AU - Hirohumi NAKANISHI
AU - Kiyohumi IMAI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1992
AB - Operation of a newly proposed semiconductor optical modulator based on absorption control by electron depletion around a p-n junction is demonstrated, forming preliminary structures of waveguide-type as well as panel-type (or surface-illuminated type) devices. The optical absorption is occurred at the intrinsic energy levels in the band structure not at the extended state into the band-gap. Performance of 35 dB on-off extinction ratio for 4 V variation of the applied voltage was obtained in a waveguide type device. Validity of the proposed mechanism were confirmed by getting large change of the absorption coefficient of around 5000 cm^-1 over wide wavelength range of 30 nm.
ER -