Low-Power 1/2 Frequency Dividers Using 0.1-µm CMOS Circuits Built with Ultrathin SIMOX Substrates
Summary :
Four types of frequency dividers were fabricated on SIMOX/SOI (Separation by IMplanted OXygen/silicon on insulator) substrates. A novel circuit among these four circuits showed highest operation frequency of 1.2 GHz under 1-V supply voltage, the gate lengths of which were 0.15 and 0.1µm. Power consumption was no more than 50 and 62 µW for both 0.15-and 0.1-µm gate designs, respectively.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E76-C No.5 pp.850-852
- Publication Date
- 1993/05/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Section on the 1992 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.28, No.4 April 1993))
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M. FUJISHIMA, K. ASADA, Y. OMURA, K. IZUMI, "Low-Power 1/2 Frequency Dividers Using 0.1-µm CMOS Circuits Built with Ultrathin SIMOX Substrates" in IEICE TRANSACTIONS on Electronics,
vol. E76-C, no. 5, pp. 850-852, May 1993, doi: .
Abstract: Four types of frequency dividers were fabricated on SIMOX/SOI (Separation by IMplanted OXygen/silicon on insulator) substrates. A novel circuit among these four circuits showed highest operation frequency of 1.2 GHz under 1-V supply voltage, the gate lengths of which were 0.15 and 0.1µm. Power consumption was no more than 50 and 62 µW for both 0.15-and 0.1-µm gate designs, respectively.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_5_850/_p
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@ARTICLE{e76-c_5_850,
author={M. FUJISHIMA, K. ASADA, Y. OMURA, K. IZUMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low-Power 1/2 Frequency Dividers Using 0.1-µm CMOS Circuits Built with Ultrathin SIMOX Substrates},
year={1993},
volume={E76-C},
number={5},
pages={850-852},
abstract={Four types of frequency dividers were fabricated on SIMOX/SOI (Separation by IMplanted OXygen/silicon on insulator) substrates. A novel circuit among these four circuits showed highest operation frequency of 1.2 GHz under 1-V supply voltage, the gate lengths of which were 0.15 and 0.1µm. Power consumption was no more than 50 and 62 µW for both 0.15-and 0.1-µm gate designs, respectively.},
keywords={},
doi={},
ISSN={},
month={May},}
Copy
TY - JOUR
TI - Low-Power 1/2 Frequency Dividers Using 0.1-µm CMOS Circuits Built with Ultrathin SIMOX Substrates
T2 - IEICE TRANSACTIONS on Electronics
SP - 850
EP - 852
AU - M. FUJISHIMA
AU - K. ASADA
AU - Y. OMURA
AU - K. IZUMI
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1993
AB - Four types of frequency dividers were fabricated on SIMOX/SOI (Separation by IMplanted OXygen/silicon on insulator) substrates. A novel circuit among these four circuits showed highest operation frequency of 1.2 GHz under 1-V supply voltage, the gate lengths of which were 0.15 and 0.1µm. Power consumption was no more than 50 and 62 µW for both 0.15-and 0.1-µm gate designs, respectively.
ER -
English
