A High Power-Added Efficiency GaAs Power MESFET and MMIC Operating at a Very Low Drain Bias for Use in Personal Handy Phones

Shigeyuki MURAI; Tetsuro SAWAI; Tsutomu YAMAGUCHI; Yasoo HARADA

A High Power-Added Efficiency GaAs Power MESFET and MMIC Operating at a Very Low Drain Bias for Use in Personal Handy Phones

Shigeyuki MURAI, Tetsuro SAWAI, Tsutomu YAMAGUCHI, Yasoo HARADA

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A 170-mW class GaAs Power MESFET and a 10-mW class MMIC pre-amplifier operating at very low drain bias have been developed for use in personal handy phones (PHP). The MESFET provided P_0(1dB)22.5 dBm, η_add38.8% at V_DS3 V with I_DS0.14 A (0.4 I_DSS) at 1.9 GHz, and also provided P_0(1dB)22.4 dBm, η_add32.6% at V_DS2 V with I_DS0.24 A (0.6 I_DSS). The MMIC using the same MESFET structure had a linear power gain of 13 dB, a linear output power of more than 10 dBm, and P_0(1dB)13.7 dBm, η_add24.3% at V_DD3 V with I_D30 mA at 1.9 GHz. The MESFET had a buried p-layer and our improved LDD n self-aligned structure both of which were optimized so as to satisfy a high V_(BR)GDO of more than 10 V, a minimized bias dependence of S-parameters and low V_K of less than 0.5 V.

Publication: IEICE TRANSACTIONS on Electronics Vol.E76-C No.6 pp.901-906

Publication Date: 1993/06/25

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Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functions and Size-Reductions)

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Shigeyuki MURAI, Tetsuro SAWAI, Tsutomu YAMAGUCHI, Yasoo HARADA, "A High Power-Added Efficiency GaAs Power MESFET and MMIC Operating at a Very Low Drain Bias for Use in Personal Handy Phones" in IEICE TRANSACTIONS on Electronics, vol. E76-C, no. 6, pp. 901-906, June 1993, doi: .
Abstract: A 170-mW class GaAs Power MESFET and a 10-mW class MMIC pre-amplifier operating at very low drain bias have been developed for use in personal handy phones (PHP). The MESFET provided P_0(1dB)22.5 dBm, η_add38.8% at V_DS3 V with I_DS0.14 A (0.4 I_DSS) at 1.9 GHz, and also provided P_0(1dB)22.4 dBm, η_add32.6% at V_DS2 V with I_DS0.24 A (0.6 I_DSS). The MMIC using the same MESFET structure had a linear power gain of 13 dB, a linear output power of more than 10 dBm, and P_0(1dB)13.7 dBm, η_add24.3% at V_DD3 V with I_D30 mA at 1.9 GHz. The MESFET had a buried p-layer and our improved LDD n self-aligned structure both of which were optimized so as to satisfy a high V_(BR)GDO of more than 10 V, a minimized bias dependence of S-parameters and low V_K of less than 0.5 V.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_6_901/_p

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@ARTICLE{e76-c_6_901,
author={Shigeyuki MURAI, Tetsuro SAWAI, Tsutomu YAMAGUCHI, Yasoo HARADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A High Power-Added Efficiency GaAs Power MESFET and MMIC Operating at a Very Low Drain Bias for Use in Personal Handy Phones},
year={1993},
volume={E76-C},
number={6},
pages={901-906},
abstract={A 170-mW class GaAs Power MESFET and a 10-mW class MMIC pre-amplifier operating at very low drain bias have been developed for use in personal handy phones (PHP). The MESFET provided P_0(1dB)22.5 dBm, η_add38.8% at V_DS3 V with I_DS0.14 A (0.4 I_DSS) at 1.9 GHz, and also provided P_0(1dB)22.4 dBm, η_add32.6% at V_DS2 V with I_DS0.24 A (0.6 I_DSS). The MMIC using the same MESFET structure had a linear power gain of 13 dB, a linear output power of more than 10 dBm, and P_0(1dB)13.7 dBm, η_add24.3% at V_DD3 V with I_D30 mA at 1.9 GHz. The MESFET had a buried p-layer and our improved LDD n self-aligned structure both of which were optimized so as to satisfy a high V_(BR)GDO of more than 10 V, a minimized bias dependence of S-parameters and low V_K of less than 0.5 V.},
keywords={},
doi={},
ISSN={},
month={June},}

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TY - JOUR
TI - A High Power-Added Efficiency GaAs Power MESFET and MMIC Operating at a Very Low Drain Bias for Use in Personal Handy Phones
T2 - IEICE TRANSACTIONS on Electronics
SP - 901
EP - 906
AU - Shigeyuki MURAI
AU - Tetsuro SAWAI
AU - Tsutomu YAMAGUCHI
AU - Yasoo HARADA
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1993
AB - A 170-mW class GaAs Power MESFET and a 10-mW class MMIC pre-amplifier operating at very low drain bias have been developed for use in personal handy phones (PHP). The MESFET provided P_0(1dB)22.5 dBm, η_add38.8% at V_DS3 V with I_DS0.14 A (0.4 I_DSS) at 1.9 GHz, and also provided P_0(1dB)22.4 dBm, η_add32.6% at V_DS2 V with I_DS0.24 A (0.6 I_DSS). The MMIC using the same MESFET structure had a linear power gain of 13 dB, a linear output power of more than 10 dBm, and P_0(1dB)13.7 dBm, η_add24.3% at V_DD3 V with I_D30 mA at 1.9 GHz. The MESFET had a buried p-layer and our improved LDD n self-aligned structure both of which were optimized so as to satisfy a high V_(BR)GDO of more than 10 V, a minimized bias dependence of S-parameters and low V_K of less than 0.5 V.
ER -