IEICE TRANSACTIONS on Electronics
Formation of (Ba, Rb) BiO3 Thin Films by Molecular Beam Epitaxy Using Distilled Ozone
Summary :
The (100) oriented BaxRb1-xBiO3 (BRBO) thin films were prepared on MgO (100) and SrTiO3(100) (STO(100)) substrate by molecular beam epitaxy using distilled ozone. The (100)-oriented BRBO thin film deposited on STO(100) substrate, showed onset superconducting transition temperature (Tc(onset)) value of 28 K and zero-resistance superconducting transition temperature (Tc(0)) value of 26 K. The respective values for Tc(onset) and Tc(0) of BRBO thin film on MgO(100) substrate were 21 K and 19 K. The growth process of the BRBO thin films grown on MgO(100) and STO(100) substrates were studied by the atomic force microscope (AFM) and the X-ray photoelectron spectroscopy (XPS). Difference in XPS-intensity of Ba as a function of the average thickness for the BRBO thin films deposited on STO(100) substrate and on MgO(100) substrate were observed. The electrical properties of junction using the BRBO thin film and the Nb-doped STO substrate (BRBO/STO(Nb)) was also investigated. The results of the current-voltage measurement and the capacitance-voltage measurement revealed that it is not necessary to take into account the unknown dielectric layer at the interface of BRBO/STO (Nb). It was not possible to interpret well the resistance-temperature behavior of Rb-doped-BaBiO3 thin film (semiconducting BBO(Rb) thin film) with the help of hopping model.
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- IEICE TRANSACTIONS on Electronics Vol.E76-C No.8 pp.1251-1260
- Publication Date
- 1993/08/25
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- Special Section PAPER (Special Issue on High-Temperature Superconducting Electronics)
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Mitsuhiko OGIHARA, Fumihiko TODA, Takehiko MAKITA, Hitoshi ABE, "Formation of (Ba, Rb) BiO3 Thin Films by Molecular Beam Epitaxy Using Distilled Ozone" in IEICE TRANSACTIONS on Electronics,
vol. E76-C, no. 8, pp. 1251-1260, August 1993, doi: .
Abstract: The (100) oriented BaxRb1-xBiO3 (BRBO) thin films were prepared on MgO (100) and SrTiO3(100) (STO(100)) substrate by molecular beam epitaxy using distilled ozone. The (100)-oriented BRBO thin film deposited on STO(100) substrate, showed onset superconducting transition temperature (Tc(onset)) value of 28 K and zero-resistance superconducting transition temperature (Tc(0)) value of 26 K. The respective values for Tc(onset) and Tc(0) of BRBO thin film on MgO(100) substrate were 21 K and 19 K. The growth process of the BRBO thin films grown on MgO(100) and STO(100) substrates were studied by the atomic force microscope (AFM) and the X-ray photoelectron spectroscopy (XPS). Difference in XPS-intensity of Ba as a function of the average thickness for the BRBO thin films deposited on STO(100) substrate and on MgO(100) substrate were observed. The electrical properties of junction using the BRBO thin film and the Nb-doped STO substrate (BRBO/STO(Nb)) was also investigated. The results of the current-voltage measurement and the capacitance-voltage measurement revealed that it is not necessary to take into account the unknown dielectric layer at the interface of BRBO/STO (Nb). It was not possible to interpret well the resistance-temperature behavior of Rb-doped-BaBiO3 thin film (semiconducting BBO(Rb) thin film) with the help of hopping model.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_8_1251/_p
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@ARTICLE{e76-c_8_1251,
author={Mitsuhiko OGIHARA, Fumihiko TODA, Takehiko MAKITA, Hitoshi ABE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Formation of (Ba, Rb) BiO3 Thin Films by Molecular Beam Epitaxy Using Distilled Ozone},
year={1993},
volume={E76-C},
number={8},
pages={1251-1260},
abstract={The (100) oriented BaxRb1-xBiO3 (BRBO) thin films were prepared on MgO (100) and SrTiO3(100) (STO(100)) substrate by molecular beam epitaxy using distilled ozone. The (100)-oriented BRBO thin film deposited on STO(100) substrate, showed onset superconducting transition temperature (Tc(onset)) value of 28 K and zero-resistance superconducting transition temperature (Tc(0)) value of 26 K. The respective values for Tc(onset) and Tc(0) of BRBO thin film on MgO(100) substrate were 21 K and 19 K. The growth process of the BRBO thin films grown on MgO(100) and STO(100) substrates were studied by the atomic force microscope (AFM) and the X-ray photoelectron spectroscopy (XPS). Difference in XPS-intensity of Ba as a function of the average thickness for the BRBO thin films deposited on STO(100) substrate and on MgO(100) substrate were observed. The electrical properties of junction using the BRBO thin film and the Nb-doped STO substrate (BRBO/STO(Nb)) was also investigated. The results of the current-voltage measurement and the capacitance-voltage measurement revealed that it is not necessary to take into account the unknown dielectric layer at the interface of BRBO/STO (Nb). It was not possible to interpret well the resistance-temperature behavior of Rb-doped-BaBiO3 thin film (semiconducting BBO(Rb) thin film) with the help of hopping model.},
keywords={},
doi={},
ISSN={},
month={August},}
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TY - JOUR
TI - Formation of (Ba, Rb) BiO3 Thin Films by Molecular Beam Epitaxy Using Distilled Ozone
T2 - IEICE TRANSACTIONS on Electronics
SP - 1251
EP - 1260
AU - Mitsuhiko OGIHARA
AU - Fumihiko TODA
AU - Takehiko MAKITA
AU - Hitoshi ABE
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1993
AB - The (100) oriented BaxRb1-xBiO3 (BRBO) thin films were prepared on MgO (100) and SrTiO3(100) (STO(100)) substrate by molecular beam epitaxy using distilled ozone. The (100)-oriented BRBO thin film deposited on STO(100) substrate, showed onset superconducting transition temperature (Tc(onset)) value of 28 K and zero-resistance superconducting transition temperature (Tc(0)) value of 26 K. The respective values for Tc(onset) and Tc(0) of BRBO thin film on MgO(100) substrate were 21 K and 19 K. The growth process of the BRBO thin films grown on MgO(100) and STO(100) substrates were studied by the atomic force microscope (AFM) and the X-ray photoelectron spectroscopy (XPS). Difference in XPS-intensity of Ba as a function of the average thickness for the BRBO thin films deposited on STO(100) substrate and on MgO(100) substrate were observed. The electrical properties of junction using the BRBO thin film and the Nb-doped STO substrate (BRBO/STO(Nb)) was also investigated. The results of the current-voltage measurement and the capacitance-voltage measurement revealed that it is not necessary to take into account the unknown dielectric layer at the interface of BRBO/STO (Nb). It was not possible to interpret well the resistance-temperature behavior of Rb-doped-BaBiO3 thin film (semiconducting BBO(Rb) thin film) with the help of hopping model.
ER -
English
