Structure and Resistivity of BaBiOy, Ba1-xLaxBiO3, and BaBi1-xLaxO3

Isao SHIME; Shiro KAMBE; Shigetoshi OHSHIMA; Katsuro OKUYAMA

IEICE TRANSACTIONS on Electronics

Structure and Resistivity of BaBiO_y, Ba_1-xLa_xBiO₃, and BaBi_1-xLa_xO₃

Isao SHIME, Shiro KAMBE, Shigetoshi OHSHIMA, Katsuro OKUYAMA

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Structure and resistivity of BaBiO_y were compared with those of Ba_1-xLa_xBiO₃. Decrease in an average Bi valence from 3.91 to 3.03 for BaBiO_y leads to an increase in the lattice parameter c from 4.37 to 4.53 , in the unit cell volume from 81 ³ to 87 ³, and in the resistivity from 10 Ωcm to 210⁵ Ωcm. It was found that the increase in the unit cell volume and the resistivity was due to change in the average Bi valence. The resistivity of BaBi_1-xLa_xO₃ was compared with that of BaBiO_y and Ba_1-xLa_xBiO₃. We also found that pseudocubic Ba_1-xLa_xBiO₃ remains semiconducting as well as pseudotetragonal BaBiO_y. The high resistivity in the Ba_1-xLa_xBiO₃ and the BaBi_1-xLa_xO₃ will be useful to the application for the SIS junction.

Publication: IEICE TRANSACTIONS on Electronics Vol.E76-C No.8 pp.1261-1264

Publication Date: 1993/08/25

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Type of Manuscript: Special Section LETTER (Special Issue on High-Temperature Superconducting Electronics)

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Isao SHIME, Shiro KAMBE, Shigetoshi OHSHIMA, Katsuro OKUYAMA, "Structure and Resistivity of BaBiOy, Ba1-xLaxBiO3, and BaBi1-xLaxO3" in IEICE TRANSACTIONS on Electronics, vol. E76-C, no. 8, pp. 1261-1264, August 1993, doi: .
Abstract: Structure and resistivity of BaBiO_y were compared with those of Ba_1-xLa_xBiO₃. Decrease in an average Bi valence from 3.91 to 3.03 for BaBiO_y leads to an increase in the lattice parameter c from 4.37 to 4.53 , in the unit cell volume from 81 ³ to 87 ³, and in the resistivity from 10 Ωcm to 210⁵ Ωcm. It was found that the increase in the unit cell volume and the resistivity was due to change in the average Bi valence. The resistivity of BaBi_1-xLa_xO₃ was compared with that of BaBiO_y and Ba_1-xLa_xBiO₃. We also found that pseudocubic Ba_1-xLa_xBiO₃ remains semiconducting as well as pseudotetragonal BaBiO_y. The high resistivity in the Ba_1-xLa_xBiO₃ and the BaBi_1-xLa_xO₃ will be useful to the application for the SIS junction.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_8_1261/_p

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@ARTICLE{e76-c_8_1261,
author={Isao SHIME, Shiro KAMBE, Shigetoshi OHSHIMA, Katsuro OKUYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Structure and Resistivity of BaBiOy, Ba1-xLaxBiO3, and BaBi1-xLaxO3},
year={1993},
volume={E76-C},
number={8},
pages={1261-1264},
abstract={Structure and resistivity of BaBiO_y were compared with those of Ba_1-xLa_xBiO₃. Decrease in an average Bi valence from 3.91 to 3.03 for BaBiO_y leads to an increase in the lattice parameter c from 4.37 to 4.53 , in the unit cell volume from 81 ³ to 87 ³, and in the resistivity from 10 Ωcm to 210⁵ Ωcm. It was found that the increase in the unit cell volume and the resistivity was due to change in the average Bi valence. The resistivity of BaBi_1-xLa_xO₃ was compared with that of BaBiO_y and Ba_1-xLa_xBiO₃. We also found that pseudocubic Ba_1-xLa_xBiO₃ remains semiconducting as well as pseudotetragonal BaBiO_y. The high resistivity in the Ba_1-xLa_xBiO₃ and the BaBi_1-xLa_xO₃ will be useful to the application for the SIS junction.},
keywords={},
doi={},
ISSN={},
month={August},}

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TY - JOUR
TI - Structure and Resistivity of BaBiOy, Ba1-xLaxBiO3, and BaBi1-xLaxO3
T2 - IEICE TRANSACTIONS on Electronics
SP - 1261
EP - 1264
AU - Isao SHIME
AU - Shiro KAMBE
AU - Shigetoshi OHSHIMA
AU - Katsuro OKUYAMA
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1993
AB - Structure and resistivity of BaBiO_y were compared with those of Ba_1-xLa_xBiO₃. Decrease in an average Bi valence from 3.91 to 3.03 for BaBiO_y leads to an increase in the lattice parameter c from 4.37 to 4.53 , in the unit cell volume from 81 ³ to 87 ³, and in the resistivity from 10 Ωcm to 210⁵ Ωcm. It was found that the increase in the unit cell volume and the resistivity was due to change in the average Bi valence. The resistivity of BaBi_1-xLa_xO₃ was compared with that of BaBiO_y and Ba_1-xLa_xBiO₃. We also found that pseudocubic Ba_1-xLa_xBiO₃ remains semiconducting as well as pseudotetragonal BaBiO_y. The high resistivity in the Ba_1-xLa_xBiO₃ and the BaBi_1-xLa_xO₃ will be useful to the application for the SIS junction.
ER -

IEICE TRANSACTIONS on Electronics

Structure and Resistivity of BaBiO_y, Ba_1-xLa_xBiO₃, and BaBi_1-xLa_xO₃

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