Effect of Field-Dependent Diffusion Coefficient in QWITT Diodes
Summary :
The small-signal negative resistance of QWITT (Quantum Well Transit-Time) diodes is calculated including the effect of field-dependent diffusion coefficient in the frequency range of 10 to 300 GHz. The drift velocity transient effect is also included. The result is compared with those obtained by using constant diffusion coefficients at average electric fields.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E76-C No.9 pp.1420-1422
- Publication Date
- 1993/09/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- LETTER
- Category
- Semiconductor Materials and Devices
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Makoto FUKUSHIMA, "Effect of Field-Dependent Diffusion Coefficient in QWITT Diodes" in IEICE TRANSACTIONS on Electronics,
vol. E76-C, no. 9, pp. 1420-1422, September 1993, doi: .
Abstract: The small-signal negative resistance of QWITT (Quantum Well Transit-Time) diodes is calculated including the effect of field-dependent diffusion coefficient in the frequency range of 10 to 300 GHz. The drift velocity transient effect is also included. The result is compared with those obtained by using constant diffusion coefficients at average electric fields.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_9_1420/_p
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@ARTICLE{e76-c_9_1420,
author={Makoto FUKUSHIMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effect of Field-Dependent Diffusion Coefficient in QWITT Diodes},
year={1993},
volume={E76-C},
number={9},
pages={1420-1422},
abstract={The small-signal negative resistance of QWITT (Quantum Well Transit-Time) diodes is calculated including the effect of field-dependent diffusion coefficient in the frequency range of 10 to 300 GHz. The drift velocity transient effect is also included. The result is compared with those obtained by using constant diffusion coefficients at average electric fields.},
keywords={},
doi={},
ISSN={},
month={September},}
Copy
TY - JOUR
TI - Effect of Field-Dependent Diffusion Coefficient in QWITT Diodes
T2 - IEICE TRANSACTIONS on Electronics
SP - 1420
EP - 1422
AU - Makoto FUKUSHIMA
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1993
AB - The small-signal negative resistance of QWITT (Quantum Well Transit-Time) diodes is calculated including the effect of field-dependent diffusion coefficient in the frequency range of 10 to 300 GHz. The drift velocity transient effect is also included. The result is compared with those obtained by using constant diffusion coefficients at average electric fields.
ER -
English
