Electrical Properties of Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET)
Summary :
A Si metal insulator semiconductor tunnel emitter transistor (Si MIS TET) which is a new type of bipolar transistor was fabricated and its electrical properties for the temperature range of 100 K - 300 K were investigated. The common emitter mode current gain obtained was 75 at 300 K and 74 at 100 K. It was confirmed by measuring the temperature dependence of the base current that the inversion base layer indeed functioned as a base of the Si MIS TET. The current gain of the Si MIS TET did not decrease at low temperature of 100 K, though the current gain of the conventional Si bipolar transistor decreases at low temperature due to the emitter bandgap narrowing in heavily doped emitter. This origin was that the carrier injection mechanism between the emitter and the base was tunneling.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E77-C No.1 pp.63-68
- Publication Date
- 1994/01/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Tomomi YOSHIMOTO, "Electrical Properties of Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET)" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 1, pp. 63-68, January 1994, doi: .
Abstract: A Si metal insulator semiconductor tunnel emitter transistor (Si MIS TET) which is a new type of bipolar transistor was fabricated and its electrical properties for the temperature range of 100 K - 300 K were investigated. The common emitter mode current gain obtained was 75 at 300 K and 74 at 100 K. It was confirmed by measuring the temperature dependence of the base current that the inversion base layer indeed functioned as a base of the Si MIS TET. The current gain of the Si MIS TET did not decrease at low temperature of 100 K, though the current gain of the conventional Si bipolar transistor decreases at low temperature due to the emitter bandgap narrowing in heavily doped emitter. This origin was that the carrier injection mechanism between the emitter and the base was tunneling.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_1_63/_p
Copy
@ARTICLE{e77-c_1_63,
author={Tomomi YOSHIMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Electrical Properties of Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET)},
year={1994},
volume={E77-C},
number={1},
pages={63-68},
abstract={A Si metal insulator semiconductor tunnel emitter transistor (Si MIS TET) which is a new type of bipolar transistor was fabricated and its electrical properties for the temperature range of 100 K - 300 K were investigated. The common emitter mode current gain obtained was 75 at 300 K and 74 at 100 K. It was confirmed by measuring the temperature dependence of the base current that the inversion base layer indeed functioned as a base of the Si MIS TET. The current gain of the Si MIS TET did not decrease at low temperature of 100 K, though the current gain of the conventional Si bipolar transistor decreases at low temperature due to the emitter bandgap narrowing in heavily doped emitter. This origin was that the carrier injection mechanism between the emitter and the base was tunneling.},
keywords={},
doi={},
ISSN={},
month={January},}
Copy
TY - JOUR
TI - Electrical Properties of Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET)
T2 - IEICE TRANSACTIONS on Electronics
SP - 63
EP - 68
AU - Tomomi YOSHIMOTO
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 1994
AB - A Si metal insulator semiconductor tunnel emitter transistor (Si MIS TET) which is a new type of bipolar transistor was fabricated and its electrical properties for the temperature range of 100 K - 300 K were investigated. The common emitter mode current gain obtained was 75 at 300 K and 74 at 100 K. It was confirmed by measuring the temperature dependence of the base current that the inversion base layer indeed functioned as a base of the Si MIS TET. The current gain of the Si MIS TET did not decrease at low temperature of 100 K, though the current gain of the conventional Si bipolar transistor decreases at low temperature due to the emitter bandgap narrowing in heavily doped emitter. This origin was that the carrier injection mechanism between the emitter and the base was tunneling.
ER -
English
