Analysis of Narrow Emitter Effects in Half-Micron Bipolar Transistors
Summary :
Narrow emitter effects in self-aligned bipolar transistors are discussed. Besides the increase of a non-ideal base current, the decrease of an ideal base current is newly observed, and a consequent fluctuation of the current gain becomes wider in the smaller emitter geometry. Both phenomena are attributed to the reduction of an emitter-impurity concentration.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E77-C No.1 pp.77-80
- Publication Date
- 1994/01/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- LETTER
- Category
- Semiconductor Materials and Devices
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Youichiro NIITSU, Hiroyuki MIYAKAWA, Osamu HIDAKA, "Analysis of Narrow Emitter Effects in Half-Micron Bipolar Transistors" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 1, pp. 77-80, January 1994, doi: .
Abstract: Narrow emitter effects in self-aligned bipolar transistors are discussed. Besides the increase of a non-ideal base current, the decrease of an ideal base current is newly observed, and a consequent fluctuation of the current gain becomes wider in the smaller emitter geometry. Both phenomena are attributed to the reduction of an emitter-impurity concentration.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_1_77/_p
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@ARTICLE{e77-c_1_77,
author={Youichiro NIITSU, Hiroyuki MIYAKAWA, Osamu HIDAKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analysis of Narrow Emitter Effects in Half-Micron Bipolar Transistors},
year={1994},
volume={E77-C},
number={1},
pages={77-80},
abstract={Narrow emitter effects in self-aligned bipolar transistors are discussed. Besides the increase of a non-ideal base current, the decrease of an ideal base current is newly observed, and a consequent fluctuation of the current gain becomes wider in the smaller emitter geometry. Both phenomena are attributed to the reduction of an emitter-impurity concentration.},
keywords={},
doi={},
ISSN={},
month={January},}
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TY - JOUR
TI - Analysis of Narrow Emitter Effects in Half-Micron Bipolar Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 77
EP - 80
AU - Youichiro NIITSU
AU - Hiroyuki MIYAKAWA
AU - Osamu HIDAKA
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 1994
AB - Narrow emitter effects in self-aligned bipolar transistors are discussed. Besides the increase of a non-ideal base current, the decrease of an ideal base current is newly observed, and a consequent fluctuation of the current gain becomes wider in the smaller emitter geometry. Both phenomena are attributed to the reduction of an emitter-impurity concentration.
ER -
English
