A Self-Biased Feedback-Controlled Pull-Down Emitter Follower for High-Speed Low-Power Bipolar Logic Circuits
Summary :
A feedback-controlled active-pull-down emitter follower that is self-biased at a low steady-state current and allows the collector dotting and emitter dotting is proposed for high-speed low-power bipolar/BiCMOS digital logic circuits. The push-pull operation of this emitter follower is precisely controlled by a feedback mechanism and does not require any extra out-of-phase signal other than the emitter-follower input from the logic stage. Simulation results based on a 0.5-µm advanced Si-bipolar technology show that the pull-down delay and drive capability of a loaded 1-mW feedback-controlled pull-down ECL gate are improved to the pull-up levels, 2.7 and 10 times better than those of the conventional resistor-pull-down ECL circuit, respectively.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E77-C No.5 pp.853-858
- Publication Date
- 1994/05/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
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Hyun J. SHIN, "A Self-Biased Feedback-Controlled Pull-Down Emitter Follower for High-Speed Low-Power Bipolar Logic Circuits" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 5, pp. 853-858, May 1994, doi: .
Abstract: A feedback-controlled active-pull-down emitter follower that is self-biased at a low steady-state current and allows the collector dotting and emitter dotting is proposed for high-speed low-power bipolar/BiCMOS digital logic circuits. The push-pull operation of this emitter follower is precisely controlled by a feedback mechanism and does not require any extra out-of-phase signal other than the emitter-follower input from the logic stage. Simulation results based on a 0.5-µm advanced Si-bipolar technology show that the pull-down delay and drive capability of a loaded 1-mW feedback-controlled pull-down ECL gate are improved to the pull-up levels, 2.7 and 10 times better than those of the conventional resistor-pull-down ECL circuit, respectively.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_5_853/_p
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@ARTICLE{e77-c_5_853,
author={Hyun J. SHIN, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Self-Biased Feedback-Controlled Pull-Down Emitter Follower for High-Speed Low-Power Bipolar Logic Circuits},
year={1994},
volume={E77-C},
number={5},
pages={853-858},
abstract={A feedback-controlled active-pull-down emitter follower that is self-biased at a low steady-state current and allows the collector dotting and emitter dotting is proposed for high-speed low-power bipolar/BiCMOS digital logic circuits. The push-pull operation of this emitter follower is precisely controlled by a feedback mechanism and does not require any extra out-of-phase signal other than the emitter-follower input from the logic stage. Simulation results based on a 0.5-µm advanced Si-bipolar technology show that the pull-down delay and drive capability of a loaded 1-mW feedback-controlled pull-down ECL gate are improved to the pull-up levels, 2.7 and 10 times better than those of the conventional resistor-pull-down ECL circuit, respectively.},
keywords={},
doi={},
ISSN={},
month={May},}
Copy
TY - JOUR
TI - A Self-Biased Feedback-Controlled Pull-Down Emitter Follower for High-Speed Low-Power Bipolar Logic Circuits
T2 - IEICE TRANSACTIONS on Electronics
SP - 853
EP - 858
AU - Hyun J. SHIN
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1994
AB - A feedback-controlled active-pull-down emitter follower that is self-biased at a low steady-state current and allows the collector dotting and emitter dotting is proposed for high-speed low-power bipolar/BiCMOS digital logic circuits. The push-pull operation of this emitter follower is precisely controlled by a feedback mechanism and does not require any extra out-of-phase signal other than the emitter-follower input from the logic stage. Simulation results based on a 0.5-µm advanced Si-bipolar technology show that the pull-down delay and drive capability of a loaded 1-mW feedback-controlled pull-down ECL gate are improved to the pull-up levels, 2.7 and 10 times better than those of the conventional resistor-pull-down ECL circuit, respectively.
ER -
English
