Ultimate Lower Bound of Power for MOS Integrated Circuits and Their Applications

Kunihiro ASADA; Mike LEE

Ultimate Lower Bound of Power for MOS Integrated Circuits and Their Applications

Kunihiro ASADA, Mike LEE

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The ultimate minimum energy of switching mechanism for MOS integrated circuits have been studied. This report elucidates the evaluation methods for minimum switching energy of instantaneous discharged mechanism after charging one, namely, recycled energy of the MOS device. Two approaches are implemented to capture this concept. One is a switching energy by the time-dependent gate capacitance (TDGC) model ; the other one by results developed by transient device simulation, which was implemented using Finite Element Method (FEM). It is understood that the non-recycled minimum swhiching energies by both approaches show a good agreement. The recycled energies are then calculated at various sub-micron gate MOS/SOI devices and can be ultra-low power of the MOS integrated circuits, which may be possible to build recycled power circuitry for super energy-saving in the future new MOS LSI. From those results, (1) the TDGC is simultaneously verified by consistent match of the non-recycled minimum switching energies; (2) the recycled switching energy is found to be the ultimate lower bound of power for MOS device; (3) the recycled switching energy can be saved up to around 80% of that of current MOS LSI.

Publication: IEICE TRANSACTIONS on Electronics Vol.E77-C No.7 pp.1131-1137

Publication Date: 1994/07/25

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Type of Manuscript: PAPER

Category: Integrated Electronics

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Kunihiro ASADA, Mike LEE, "Ultimate Lower Bound of Power for MOS Integrated Circuits and Their Applications" in IEICE TRANSACTIONS on Electronics, vol. E77-C, no. 7, pp. 1131-1137, July 1994, doi: .
Abstract: The ultimate minimum energy of switching mechanism for MOS integrated circuits have been studied. This report elucidates the evaluation methods for minimum switching energy of instantaneous discharged mechanism after charging one, namely, recycled energy of the MOS device. Two approaches are implemented to capture this concept. One is a switching energy by the time-dependent gate capacitance (TDGC) model ; the other one by results developed by transient device simulation, which was implemented using Finite Element Method (FEM). It is understood that the non-recycled minimum swhiching energies by both approaches show a good agreement. The recycled energies are then calculated at various sub-micron gate MOS/SOI devices and can be ultra-low power of the MOS integrated circuits, which may be possible to build recycled power circuitry for super energy-saving in the future new MOS LSI. From those results, (1) the TDGC is simultaneously verified by consistent match of the non-recycled minimum switching energies; (2) the recycled switching energy is found to be the ultimate lower bound of power for MOS device; (3) the recycled switching energy can be saved up to around 80% of that of current MOS LSI.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_7_1131/_p

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@ARTICLE{e77-c_7_1131,
author={Kunihiro ASADA, Mike LEE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Ultimate Lower Bound of Power for MOS Integrated Circuits and Their Applications},
year={1994},
volume={E77-C},
number={7},
pages={1131-1137},
abstract={The ultimate minimum energy of switching mechanism for MOS integrated circuits have been studied. This report elucidates the evaluation methods for minimum switching energy of instantaneous discharged mechanism after charging one, namely, recycled energy of the MOS device. Two approaches are implemented to capture this concept. One is a switching energy by the time-dependent gate capacitance (TDGC) model ; the other one by results developed by transient device simulation, which was implemented using Finite Element Method (FEM). It is understood that the non-recycled minimum swhiching energies by both approaches show a good agreement. The recycled energies are then calculated at various sub-micron gate MOS/SOI devices and can be ultra-low power of the MOS integrated circuits, which may be possible to build recycled power circuitry for super energy-saving in the future new MOS LSI. From those results, (1) the TDGC is simultaneously verified by consistent match of the non-recycled minimum switching energies; (2) the recycled switching energy is found to be the ultimate lower bound of power for MOS device; (3) the recycled switching energy can be saved up to around 80% of that of current MOS LSI.},
keywords={},
doi={},
ISSN={},
month={July},}

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TY - JOUR
TI - Ultimate Lower Bound of Power for MOS Integrated Circuits and Their Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1131
EP - 1137
AU - Kunihiro ASADA
AU - Mike LEE
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1994
AB - The ultimate minimum energy of switching mechanism for MOS integrated circuits have been studied. This report elucidates the evaluation methods for minimum switching energy of instantaneous discharged mechanism after charging one, namely, recycled energy of the MOS device. Two approaches are implemented to capture this concept. One is a switching energy by the time-dependent gate capacitance (TDGC) model ; the other one by results developed by transient device simulation, which was implemented using Finite Element Method (FEM). It is understood that the non-recycled minimum swhiching energies by both approaches show a good agreement. The recycled energies are then calculated at various sub-micron gate MOS/SOI devices and can be ultra-low power of the MOS integrated circuits, which may be possible to build recycled power circuitry for super energy-saving in the future new MOS LSI. From those results, (1) the TDGC is simultaneously verified by consistent match of the non-recycled minimum switching energies; (2) the recycled switching energy is found to be the ultimate lower bound of power for MOS device; (3) the recycled switching energy can be saved up to around 80% of that of current MOS LSI.
ER -