IEICE TRANSACTIONS on Electronics
Heavy p- and n-type Doping with Si on (311)A GaAs Substrates by Molecular Beam Epitaxy
Summary :
We have systematically studied the characteristics of Si doping in GaAs grown on (311)A GaAs substrates by molecular beam epitaxy. The growth temperature dependence of Si doping has been investigated. It is found that the conduction-type sharply changes from p-type to n-type with decreasing growth temperature at a critical temperature of 430-480
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- IEICE TRANSACTIONS on Electronics Vol.E77-C No.9 pp.1408-1413
- Publication Date
- 1994/09/25
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- Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
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Kenichi AGAWA, Yoshio HASHIMOTO, Kazuhiko HIRAKAWA, Noriaki SAKAMOTO, Toshiaki IKOMA, "Heavy p- and n-type Doping with Si on (311)A GaAs Substrates by Molecular Beam Epitaxy" in IEICE TRANSACTIONS on Electronics,
vol. E77-C, no. 9, pp. 1408-1413, September 1994, doi: .
Abstract: We have systematically studied the characteristics of Si doping in GaAs grown on (311)A GaAs substrates by molecular beam epitaxy. The growth temperature dependence of Si doping has been investigated. It is found that the conduction-type sharply changes from p-type to n-type with decreasing growth temperature at a critical temperature of 430-480
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_9_1408/_p
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@ARTICLE{e77-c_9_1408,
author={Kenichi AGAWA, Yoshio HASHIMOTO, Kazuhiko HIRAKAWA, Noriaki SAKAMOTO, Toshiaki IKOMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Heavy p- and n-type Doping with Si on (311)A GaAs Substrates by Molecular Beam Epitaxy},
year={1994},
volume={E77-C},
number={9},
pages={1408-1413},
abstract={We have systematically studied the characteristics of Si doping in GaAs grown on (311)A GaAs substrates by molecular beam epitaxy. The growth temperature dependence of Si doping has been investigated. It is found that the conduction-type sharply changes from p-type to n-type with decreasing growth temperature at a critical temperature of 430-480
keywords={},
doi={},
ISSN={},
month={September},}
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TY - JOUR
TI - Heavy p- and n-type Doping with Si on (311)A GaAs Substrates by Molecular Beam Epitaxy
T2 - IEICE TRANSACTIONS on Electronics
SP - 1408
EP - 1413
AU - Kenichi AGAWA
AU - Yoshio HASHIMOTO
AU - Kazuhiko HIRAKAWA
AU - Noriaki SAKAMOTO
AU - Toshiaki IKOMA
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1994
AB - We have systematically studied the characteristics of Si doping in GaAs grown on (311)A GaAs substrates by molecular beam epitaxy. The growth temperature dependence of Si doping has been investigated. It is found that the conduction-type sharply changes from p-type to n-type with decreasing growth temperature at a critical temperature of 430-480
ER -
English
