Relative Intensity Noise of DFB LD's with Near and Far End Reflections

Takeshi KAWAI; Adi RAHWANTO; Katsuya KITAJIMA; Masakazu MORI; Toshio GOTO; Akira MIYAUCHI

Relative Intensity Noise of DFB LD's with Near and Far End Reflections

Takeshi KAWAI, Adi RAHWANTO, Katsuya KITAJIMA, Masakazu MORI, Toshio GOTO, Akira MIYAUCHI

Full Text Views

0

Cite this

Summary :

The relative intensity noise (RIN) spectra of DC driven 1.3 µm distributed feedback laser diodes under the influence of external reflections are measured for various currents and reflection lengths. The effective power reflectivities are 310^-4-310^-3. The enhanced noise is observed when the relaxation oscillation frequency coincides with the external cavity frequency. It is also observed that the RIN spectra with the near end reflections differ from those with the far end reflections. The degradation of the RIN spectra is analyzed with the rate equations numerically. A new reflection noise model, which includes the carrier density change induced by the reflections, is introduced. The near and far end reflections are characterized well by this model. Furthermore, it is found that the reflection induced noise effect can be described well by the far end reflection noise model even when the reflection length is as short as 1 m.

Publication: IEICE TRANSACTIONS on Electronics Vol.E78-C No.12 pp.1779-1786

Publication Date: 1995/12/25

Publicized

Online ISSN

DOI

Type of Manuscript: PAPER

Category: Opto-Electronics

Cite this

Copy

Takeshi KAWAI, Adi RAHWANTO, Katsuya KITAJIMA, Masakazu MORI, Toshio GOTO, Akira MIYAUCHI, "Relative Intensity Noise of DFB LD's with Near and Far End Reflections" in IEICE TRANSACTIONS on Electronics, vol. E78-C, no. 12, pp. 1779-1786, December 1995, doi: .
Abstract: The relative intensity noise (RIN) spectra of DC driven 1.3 µm distributed feedback laser diodes under the influence of external reflections are measured for various currents and reflection lengths. The effective power reflectivities are 310^-4-310^-3. The enhanced noise is observed when the relaxation oscillation frequency coincides with the external cavity frequency. It is also observed that the RIN spectra with the near end reflections differ from those with the far end reflections. The degradation of the RIN spectra is analyzed with the rate equations numerically. A new reflection noise model, which includes the carrier density change induced by the reflections, is introduced. The near and far end reflections are characterized well by this model. Furthermore, it is found that the reflection induced noise effect can be described well by the far end reflection noise model even when the reflection length is as short as 1 m.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e78-c_12_1779/_p

Copy

@ARTICLE{e78-c_12_1779,
author={Takeshi KAWAI, Adi RAHWANTO, Katsuya KITAJIMA, Masakazu MORI, Toshio GOTO, Akira MIYAUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Relative Intensity Noise of DFB LD's with Near and Far End Reflections},
year={1995},
volume={E78-C},
number={12},
pages={1779-1786},
abstract={The relative intensity noise (RIN) spectra of DC driven 1.3 µm distributed feedback laser diodes under the influence of external reflections are measured for various currents and reflection lengths. The effective power reflectivities are 310^-4-310^-3. The enhanced noise is observed when the relaxation oscillation frequency coincides with the external cavity frequency. It is also observed that the RIN spectra with the near end reflections differ from those with the far end reflections. The degradation of the RIN spectra is analyzed with the rate equations numerically. A new reflection noise model, which includes the carrier density change induced by the reflections, is introduced. The near and far end reflections are characterized well by this model. Furthermore, it is found that the reflection induced noise effect can be described well by the far end reflection noise model even when the reflection length is as short as 1 m.},
keywords={},
doi={},
ISSN={},
month={December},}

Copy

TY - JOUR
TI - Relative Intensity Noise of DFB LD's with Near and Far End Reflections
T2 - IEICE TRANSACTIONS on Electronics
SP - 1779
EP - 1786
AU - Takeshi KAWAI
AU - Adi RAHWANTO
AU - Katsuya KITAJIMA
AU - Masakazu MORI
AU - Toshio GOTO
AU - Akira MIYAUCHI
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1995
AB - The relative intensity noise (RIN) spectra of DC driven 1.3 µm distributed feedback laser diodes under the influence of external reflections are measured for various currents and reflection lengths. The effective power reflectivities are 310^-4-310^-3. The enhanced noise is observed when the relaxation oscillation frequency coincides with the external cavity frequency. It is also observed that the RIN spectra with the near end reflections differ from those with the far end reflections. The degradation of the RIN spectra is analyzed with the rate equations numerically. A new reflection noise model, which includes the carrier density change induced by the reflections, is introduced. The near and far end reflections are characterized well by this model. Furthermore, it is found that the reflection induced noise effect can be described well by the far end reflection noise model even when the reflection length is as short as 1 m.
ER -