Three-Dimensional Microfabrication of Single-Crystal Silicon by Plasma Etching
Summary :
A conventional anode coupled plasma etching process has been developed to etch 300 µm-deep cavities and 600 µm-through holes with nearly vertical sidewalls into single crystal silicon. An optimized SF6/O2 gas mixture results in a nearly vertical etching profile. A silicon wafer was fabricated with a large number of cavities and through holes with less than 1 percent uniformity. It was also experimentally confirmed that this process can be used to etch vertical cavities and through holes in single-crystal silicon with any orientation. This process has the advantage of unlimited etching depth and etching patterns. Advantages in mechanical strength are obtained because a micro-curve is formed at the bottom edge of the cavities. This etching process developed on a conventional plasma etching system was utilized to fabricate a torsional vibrator that consists of single-crystal silicon and Pyrex glass.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E78-C No.2 pp.167-173
- Publication Date
- 1995/02/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on Micromachines and Micro Electro Mechanical Systems)
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Tomoaki GOTO, Kouji MATSUSHITA, Katsumi HIRONO, "Three-Dimensional Microfabrication of Single-Crystal Silicon by Plasma Etching" in IEICE TRANSACTIONS on Electronics,
vol. E78-C, no. 2, pp. 167-173, February 1995, doi: .
Abstract: A conventional anode coupled plasma etching process has been developed to etch 300 µm-deep cavities and 600 µm-through holes with nearly vertical sidewalls into single crystal silicon. An optimized SF6/O2 gas mixture results in a nearly vertical etching profile. A silicon wafer was fabricated with a large number of cavities and through holes with less than 1 percent uniformity. It was also experimentally confirmed that this process can be used to etch vertical cavities and through holes in single-crystal silicon with any orientation. This process has the advantage of unlimited etching depth and etching patterns. Advantages in mechanical strength are obtained because a micro-curve is formed at the bottom edge of the cavities. This etching process developed on a conventional plasma etching system was utilized to fabricate a torsional vibrator that consists of single-crystal silicon and Pyrex glass.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e78-c_2_167/_p
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@ARTICLE{e78-c_2_167,
author={Tomoaki GOTO, Kouji MATSUSHITA, Katsumi HIRONO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Three-Dimensional Microfabrication of Single-Crystal Silicon by Plasma Etching},
year={1995},
volume={E78-C},
number={2},
pages={167-173},
abstract={A conventional anode coupled plasma etching process has been developed to etch 300 µm-deep cavities and 600 µm-through holes with nearly vertical sidewalls into single crystal silicon. An optimized SF6/O2 gas mixture results in a nearly vertical etching profile. A silicon wafer was fabricated with a large number of cavities and through holes with less than 1 percent uniformity. It was also experimentally confirmed that this process can be used to etch vertical cavities and through holes in single-crystal silicon with any orientation. This process has the advantage of unlimited etching depth and etching patterns. Advantages in mechanical strength are obtained because a micro-curve is formed at the bottom edge of the cavities. This etching process developed on a conventional plasma etching system was utilized to fabricate a torsional vibrator that consists of single-crystal silicon and Pyrex glass.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Three-Dimensional Microfabrication of Single-Crystal Silicon by Plasma Etching
T2 - IEICE TRANSACTIONS on Electronics
SP - 167
EP - 173
AU - Tomoaki GOTO
AU - Kouji MATSUSHITA
AU - Katsumi HIRONO
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1995
AB - A conventional anode coupled plasma etching process has been developed to etch 300 µm-deep cavities and 600 µm-through holes with nearly vertical sidewalls into single crystal silicon. An optimized SF6/O2 gas mixture results in a nearly vertical etching profile. A silicon wafer was fabricated with a large number of cavities and through holes with less than 1 percent uniformity. It was also experimentally confirmed that this process can be used to etch vertical cavities and through holes in single-crystal silicon with any orientation. This process has the advantage of unlimited etching depth and etching patterns. Advantages in mechanical strength are obtained because a micro-curve is formed at the bottom edge of the cavities. This etching process developed on a conventional plasma etching system was utilized to fabricate a torsional vibrator that consists of single-crystal silicon and Pyrex glass.
ER -
English
