This paper presents a new microprocessing method that uses a Cl2 fast atom beam (FAB) with stainless steel (SUS304) patterned masks. This new method uses the patterned mask instead of lithographically processed patterned photoresist materials employed in the conventional FAB microprocessing method. We examined the performance of this method by etching GaAs workpieces under various conditions: (1) by setting the distance between the mask surface and flat workpiece surface, L, from 0 µm to 500 µm; (2) by setting the angle between the FAB axis and the flat workpiece surface, θ; to either 30
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Masahiro HATAKEYAMA, Katsunori ICHIKI, Tadasuke KOBATA, Masayuki NAKAO, Yotaro HATAMURA, "Fast Atom Beam (FAB) Processing with Separated Masks" in IEICE TRANSACTIONS on Electronics,
vol. E78-C, no. 2, pp. 174-179, February 1995, doi: .
Abstract: This paper presents a new microprocessing method that uses a Cl2 fast atom beam (FAB) with stainless steel (SUS304) patterned masks. This new method uses the patterned mask instead of lithographically processed patterned photoresist materials employed in the conventional FAB microprocessing method. We examined the performance of this method by etching GaAs workpieces under various conditions: (1) by setting the distance between the mask surface and flat workpiece surface, L, from 0 µm to 500 µm; (2) by setting the angle between the FAB axis and the flat workpiece surface, θ; to either 30
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e78-c_2_174/_p
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@ARTICLE{e78-c_2_174,
author={Masahiro HATAKEYAMA, Katsunori ICHIKI, Tadasuke KOBATA, Masayuki NAKAO, Yotaro HATAMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fast Atom Beam (FAB) Processing with Separated Masks},
year={1995},
volume={E78-C},
number={2},
pages={174-179},
abstract={This paper presents a new microprocessing method that uses a Cl2 fast atom beam (FAB) with stainless steel (SUS304) patterned masks. This new method uses the patterned mask instead of lithographically processed patterned photoresist materials employed in the conventional FAB microprocessing method. We examined the performance of this method by etching GaAs workpieces under various conditions: (1) by setting the distance between the mask surface and flat workpiece surface, L, from 0 µm to 500 µm; (2) by setting the angle between the FAB axis and the flat workpiece surface, θ; to either 30
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Fast Atom Beam (FAB) Processing with Separated Masks
T2 - IEICE TRANSACTIONS on Electronics
SP - 174
EP - 179
AU - Masahiro HATAKEYAMA
AU - Katsunori ICHIKI
AU - Tadasuke KOBATA
AU - Masayuki NAKAO
AU - Yotaro HATAMURA
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 1995
AB - This paper presents a new microprocessing method that uses a Cl2 fast atom beam (FAB) with stainless steel (SUS304) patterned masks. This new method uses the patterned mask instead of lithographically processed patterned photoresist materials employed in the conventional FAB microprocessing method. We examined the performance of this method by etching GaAs workpieces under various conditions: (1) by setting the distance between the mask surface and flat workpiece surface, L, from 0 µm to 500 µm; (2) by setting the angle between the FAB axis and the flat workpiece surface, θ; to either 30
ER -