A YBaCuO-Nonsuperconductive YBaCuO-YBaCuO coplanar Josephson junction has been fabricated, using Nonsuperconductive YBaCuO thin film deposited on an MgO(100) substrate with intentional and very local damage which was created by Focused Ion Beam. The YBaCuO grown on the damaged section of the substrate turned out to be non-superconductor, due to implanted Ga ions and the change in the crystal quality, facilitating formation of an S-N-S junction. We found the important fact that the critical current density decreased exponentially with inverse of the junction length which was changed from 0.2 to 1 µm, and that Ga ion was detected in the thin films of the junctions, and that the thin films of the junctions were formed by a mixture of an amorphous, a polycrystal and a crystal, which is confirmed by Transmission Electron Diffraction. And the damaged substrate gave rise to Ga segregation and the mixed crystal, which played an very important role to form the normal metallic YBCO thin film of the Josephson junction. All these facts are related with the S-N-S junctions.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Yunnghee KIM, Yoshihisa SOUTOME, Hiroshi KIMURA, Yoichi OKABE, "Co-planar Josephson Junction Using Nonsuperconductive YBaCuO Formed on Very Locally Damaged Substrate by FIB" in IEICE TRANSACTIONS on Electronics,
vol. E78-C, no. 5, pp. 471-475, May 1995, doi: .
Abstract: A YBaCuO-Nonsuperconductive YBaCuO-YBaCuO coplanar Josephson junction has been fabricated, using Nonsuperconductive YBaCuO thin film deposited on an MgO(100) substrate with intentional and very local damage which was created by Focused Ion Beam. The YBaCuO grown on the damaged section of the substrate turned out to be non-superconductor, due to implanted Ga ions and the change in the crystal quality, facilitating formation of an S-N-S junction. We found the important fact that the critical current density decreased exponentially with inverse of the junction length which was changed from 0.2 to 1 µm, and that Ga ion was detected in the thin films of the junctions, and that the thin films of the junctions were formed by a mixture of an amorphous, a polycrystal and a crystal, which is confirmed by Transmission Electron Diffraction. And the damaged substrate gave rise to Ga segregation and the mixed crystal, which played an very important role to form the normal metallic YBCO thin film of the Josephson junction. All these facts are related with the S-N-S junctions.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e78-c_5_471/_p
Copy
@ARTICLE{e78-c_5_471,
author={Yunnghee KIM, Yoshihisa SOUTOME, Hiroshi KIMURA, Yoichi OKABE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Co-planar Josephson Junction Using Nonsuperconductive YBaCuO Formed on Very Locally Damaged Substrate by FIB},
year={1995},
volume={E78-C},
number={5},
pages={471-475},
abstract={A YBaCuO-Nonsuperconductive YBaCuO-YBaCuO coplanar Josephson junction has been fabricated, using Nonsuperconductive YBaCuO thin film deposited on an MgO(100) substrate with intentional and very local damage which was created by Focused Ion Beam. The YBaCuO grown on the damaged section of the substrate turned out to be non-superconductor, due to implanted Ga ions and the change in the crystal quality, facilitating formation of an S-N-S junction. We found the important fact that the critical current density decreased exponentially with inverse of the junction length which was changed from 0.2 to 1 µm, and that Ga ion was detected in the thin films of the junctions, and that the thin films of the junctions were formed by a mixture of an amorphous, a polycrystal and a crystal, which is confirmed by Transmission Electron Diffraction. And the damaged substrate gave rise to Ga segregation and the mixed crystal, which played an very important role to form the normal metallic YBCO thin film of the Josephson junction. All these facts are related with the S-N-S junctions.},
keywords={},
doi={},
ISSN={},
month={May},}
Copy
TY - JOUR
TI - Co-planar Josephson Junction Using Nonsuperconductive YBaCuO Formed on Very Locally Damaged Substrate by FIB
T2 - IEICE TRANSACTIONS on Electronics
SP - 471
EP - 475
AU - Yunnghee KIM
AU - Yoshihisa SOUTOME
AU - Hiroshi KIMURA
AU - Yoichi OKABE
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1995
AB - A YBaCuO-Nonsuperconductive YBaCuO-YBaCuO coplanar Josephson junction has been fabricated, using Nonsuperconductive YBaCuO thin film deposited on an MgO(100) substrate with intentional and very local damage which was created by Focused Ion Beam. The YBaCuO grown on the damaged section of the substrate turned out to be non-superconductor, due to implanted Ga ions and the change in the crystal quality, facilitating formation of an S-N-S junction. We found the important fact that the critical current density decreased exponentially with inverse of the junction length which was changed from 0.2 to 1 µm, and that Ga ion was detected in the thin films of the junctions, and that the thin films of the junctions were formed by a mixture of an amorphous, a polycrystal and a crystal, which is confirmed by Transmission Electron Diffraction. And the damaged substrate gave rise to Ga segregation and the mixed crystal, which played an very important role to form the normal metallic YBCO thin film of the Josephson junction. All these facts are related with the S-N-S junctions.
ER -