Highly Efficient 1.5-GHz Band Si Power MOS Amplifier Module
Summary :
A 1.5 GHz band Si power MOS amplifier module with 50% total efficiency, 1 W output power and 30 dB power gain has been developed for front-end transmitter of digital cellular telephones. A combination of a highly efficient power MOSFET for the output stage and an integrated two stage MOS amplifier for the driver with an impedance matching circuit minimizing the length of striplines made it possible to achieve high total efficiency, high power gain, and smaller size of the amplifier module.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E78-C No.8 pp.979-983
- Publication Date
- 1995/08/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)
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Isao YOSHIDA, Mineo KATSUEDA, "Highly Efficient 1.5-GHz Band Si Power MOS Amplifier Module" in IEICE TRANSACTIONS on Electronics,
vol. E78-C, no. 8, pp. 979-983, August 1995, doi: .
Abstract: A 1.5 GHz band Si power MOS amplifier module with 50% total efficiency, 1 W output power and 30 dB power gain has been developed for front-end transmitter of digital cellular telephones. A combination of a highly efficient power MOSFET for the output stage and an integrated two stage MOS amplifier for the driver with an impedance matching circuit minimizing the length of striplines made it possible to achieve high total efficiency, high power gain, and smaller size of the amplifier module.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e78-c_8_979/_p
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@ARTICLE{e78-c_8_979,
author={Isao YOSHIDA, Mineo KATSUEDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Highly Efficient 1.5-GHz Band Si Power MOS Amplifier Module},
year={1995},
volume={E78-C},
number={8},
pages={979-983},
abstract={A 1.5 GHz band Si power MOS amplifier module with 50% total efficiency, 1 W output power and 30 dB power gain has been developed for front-end transmitter of digital cellular telephones. A combination of a highly efficient power MOSFET for the output stage and an integrated two stage MOS amplifier for the driver with an impedance matching circuit minimizing the length of striplines made it possible to achieve high total efficiency, high power gain, and smaller size of the amplifier module.},
keywords={},
doi={},
ISSN={},
month={August},}
Copy
TY - JOUR
TI - Highly Efficient 1.5-GHz Band Si Power MOS Amplifier Module
T2 - IEICE TRANSACTIONS on Electronics
SP - 979
EP - 983
AU - Isao YOSHIDA
AU - Mineo KATSUEDA
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1995
AB - A 1.5 GHz band Si power MOS amplifier module with 50% total efficiency, 1 W output power and 30 dB power gain has been developed for front-end transmitter of digital cellular telephones. A combination of a highly efficient power MOSFET for the output stage and an integrated two stage MOS amplifier for the driver with an impedance matching circuit minimizing the length of striplines made it possible to achieve high total efficiency, high power gain, and smaller size of the amplifier module.
ER -
English
