Push-Pull Type Ridged Ti:LiNbO3 Optical Modulator
Summary :
We describe the design, fabrication, and characteristics of a push-pull type ridged Ti:LiNbO3 optical modulator with two electrodes. The structure keeps microwave propagation loss low and enables a large interaction between microwaves and optical waves under the condition of velocity and impedance matching, resulting in a large modulation bandwidth and low driving voltage. Using this structure, we have developed an optical intensity modulator with an optical 3-dB bandwidth of 45 GHz (an electrical 3-dB bandwidth of 30 GHz) and a half-wave voltage of 3.9 V in single-electdoe operation (a half-wave voltage of 1.95 V in push-pull operation)at a wavelength of 1.55µm.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.1 pp.27-31
- Publication Date
- 1996/01/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Optomicrowave Techniques and Their Applications)
- Category
- Optomicrowave Devices
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Kazuto NOGUCHI, Osamu MITOMI, Hiroshi MIYAZAWA, "Push-Pull Type Ridged Ti:LiNbO3 Optical Modulator" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 1, pp. 27-31, January 1996, doi: .
Abstract: We describe the design, fabrication, and characteristics of a push-pull type ridged Ti:LiNbO3 optical modulator with two electrodes. The structure keeps microwave propagation loss low and enables a large interaction between microwaves and optical waves under the condition of velocity and impedance matching, resulting in a large modulation bandwidth and low driving voltage. Using this structure, we have developed an optical intensity modulator with an optical 3-dB bandwidth of 45 GHz (an electrical 3-dB bandwidth of 30 GHz) and a half-wave voltage of 3.9 V in single-electdoe operation (a half-wave voltage of 1.95 V in push-pull operation)at a wavelength of 1.55µm.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_1_27/_p
Copy
@ARTICLE{e79-c_1_27,
author={Kazuto NOGUCHI, Osamu MITOMI, Hiroshi MIYAZAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Push-Pull Type Ridged Ti:LiNbO3 Optical Modulator},
year={1996},
volume={E79-C},
number={1},
pages={27-31},
abstract={We describe the design, fabrication, and characteristics of a push-pull type ridged Ti:LiNbO3 optical modulator with two electrodes. The structure keeps microwave propagation loss low and enables a large interaction between microwaves and optical waves under the condition of velocity and impedance matching, resulting in a large modulation bandwidth and low driving voltage. Using this structure, we have developed an optical intensity modulator with an optical 3-dB bandwidth of 45 GHz (an electrical 3-dB bandwidth of 30 GHz) and a half-wave voltage of 3.9 V in single-electdoe operation (a half-wave voltage of 1.95 V in push-pull operation)at a wavelength of 1.55µm.},
keywords={},
doi={},
ISSN={},
month={January},}
Copy
TY - JOUR
TI - Push-Pull Type Ridged Ti:LiNbO3 Optical Modulator
T2 - IEICE TRANSACTIONS on Electronics
SP - 27
EP - 31
AU - Kazuto NOGUCHI
AU - Osamu MITOMI
AU - Hiroshi MIYAZAWA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 1996
AB - We describe the design, fabrication, and characteristics of a push-pull type ridged Ti:LiNbO3 optical modulator with two electrodes. The structure keeps microwave propagation loss low and enables a large interaction between microwaves and optical waves under the condition of velocity and impedance matching, resulting in a large modulation bandwidth and low driving voltage. Using this structure, we have developed an optical intensity modulator with an optical 3-dB bandwidth of 45 GHz (an electrical 3-dB bandwidth of 30 GHz) and a half-wave voltage of 3.9 V in single-electdoe operation (a half-wave voltage of 1.95 V in push-pull operation)at a wavelength of 1.55µm.
ER -
English
