A 40GHz fT SATURN Transistor Using 2-Step Epitaxial Base Technology
Summary :
We have developed the Epi-Base SATURN process as a silicon bipolar process technology which can be applied to optical transmission LSIs. This process technology, to which low temperature selective epitaxial growth technology is applied, is based on the SATURN process. By performing selective epitaxial growth for base formation in 2 steps, transistors with a 40GHz maximum cut-off frequency have been fabricated. In circuit simulation based on SPICE parameters of transistors, the target performance required for 2.4 Gbit/s optical interface LSIs has been achieved.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.4 pp.549-553
- Publication Date
- 1996/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
- Category
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Hirokazu FUJIMAKI, Koji YAMONO, Kenichi SUZUKI, "A 40GHz fT SATURN Transistor Using 2-Step Epitaxial Base Technology" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 4, pp. 549-553, April 1996, doi: .
Abstract: We have developed the Epi-Base SATURN process as a silicon bipolar process technology which can be applied to optical transmission LSIs. This process technology, to which low temperature selective epitaxial growth technology is applied, is based on the SATURN process. By performing selective epitaxial growth for base formation in 2 steps, transistors with a 40GHz maximum cut-off frequency have been fabricated. In circuit simulation based on SPICE parameters of transistors, the target performance required for 2.4 Gbit/s optical interface LSIs has been achieved.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_4_549/_p
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@ARTICLE{e79-c_4_549,
author={Hirokazu FUJIMAKI, Koji YAMONO, Kenichi SUZUKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 40GHz fT SATURN Transistor Using 2-Step Epitaxial Base Technology},
year={1996},
volume={E79-C},
number={4},
pages={549-553},
abstract={We have developed the Epi-Base SATURN process as a silicon bipolar process technology which can be applied to optical transmission LSIs. This process technology, to which low temperature selective epitaxial growth technology is applied, is based on the SATURN process. By performing selective epitaxial growth for base formation in 2 steps, transistors with a 40GHz maximum cut-off frequency have been fabricated. In circuit simulation based on SPICE parameters of transistors, the target performance required for 2.4 Gbit/s optical interface LSIs has been achieved.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - A 40GHz fT SATURN Transistor Using 2-Step Epitaxial Base Technology
T2 - IEICE TRANSACTIONS on Electronics
SP - 549
EP - 553
AU - Hirokazu FUJIMAKI
AU - Koji YAMONO
AU - Kenichi SUZUKI
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1996
AB - We have developed the Epi-Base SATURN process as a silicon bipolar process technology which can be applied to optical transmission LSIs. This process technology, to which low temperature selective epitaxial growth technology is applied, is based on the SATURN process. By performing selective epitaxial growth for base formation in 2 steps, transistors with a 40GHz maximum cut-off frequency have been fabricated. In circuit simulation based on SPICE parameters of transistors, the target performance required for 2.4 Gbit/s optical interface LSIs has been achieved.
ER -
English
