Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications

Yukihiro KIYOTA; Tohru NAKAMURA; Seiji SUZUKI; Taroh INADA

Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications

Yukihiro KIYOTA, Tohru NAKAMURA, Seiji SUZUKI, Taroh INADA

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Ultrashallow p-type layers have been formed using an one-wafer type reactor for rapid vapor-phase doping (RVD) with lamp annealing system. Bipolar and MOS transistors were fabricated using the system for the first time. The process includes the injection of the B₂H₆ diffusion source gas with hydrogen carrier gas at room temperature and rapid thermal annealing using lamps. Ultrashallow boron doping was achieved at 900 for 60 seconds; that is, the junction depths were less the 60 nm with a peak boron concentration of between 10¹⁹ and 10²⁰ cm^-3. The sheet boron concentrations is controlled by adjusting the flow rate of B₂H₆. To show the potential of the process, bipolar and MOS transistors were fabricated. The base regions of conventional bipolar transistors were formed by rapid vapor-phase doping. Transistors with 20-nm base and emitter were fabricated and they showed current gain of 150. Shallow source and drain of PMOS transistors were also formed. The threshold voltage roll-off was suppressed down to gate length of 0.22 µm, while devices with BF₂-implanted source and drain showed the roll-off below 0.5 µm. Devices with RVD-source and drain thus have drain current 1.5 times higher than those with BF₂ ion implantation. RVD provides both good short-channel characteristics and high current drivability.

Publication: IEICE TRANSACTIONS on Electronics Vol.E79-C No.4 pp.554-559

Publication Date: 1996/04/25

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Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)

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Yukihiro KIYOTA, Tohru NAKAMURA, Seiji SUZUKI, Taroh INADA, "Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications" in IEICE TRANSACTIONS on Electronics, vol. E79-C, no. 4, pp. 554-559, April 1996, doi: .
Abstract: Ultrashallow p-type layers have been formed using an one-wafer type reactor for rapid vapor-phase doping (RVD) with lamp annealing system. Bipolar and MOS transistors were fabricated using the system for the first time. The process includes the injection of the B₂H₆ diffusion source gas with hydrogen carrier gas at room temperature and rapid thermal annealing using lamps. Ultrashallow boron doping was achieved at 900 for 60 seconds; that is, the junction depths were less the 60 nm with a peak boron concentration of between 10¹⁹ and 10²⁰ cm^-3. The sheet boron concentrations is controlled by adjusting the flow rate of B₂H₆. To show the potential of the process, bipolar and MOS transistors were fabricated. The base regions of conventional bipolar transistors were formed by rapid vapor-phase doping. Transistors with 20-nm base and emitter were fabricated and they showed current gain of 150. Shallow source and drain of PMOS transistors were also formed. The threshold voltage roll-off was suppressed down to gate length of 0.22 µm, while devices with BF₂-implanted source and drain showed the roll-off below 0.5 µm. Devices with RVD-source and drain thus have drain current 1.5 times higher than those with BF₂ ion implantation. RVD provides both good short-channel characteristics and high current drivability.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_4_554/_p

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@ARTICLE{e79-c_4_554,
author={Yukihiro KIYOTA, Tohru NAKAMURA, Seiji SUZUKI, Taroh INADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications},
year={1996},
volume={E79-C},
number={4},
pages={554-559},
abstract={Ultrashallow p-type layers have been formed using an one-wafer type reactor for rapid vapor-phase doping (RVD) with lamp annealing system. Bipolar and MOS transistors were fabricated using the system for the first time. The process includes the injection of the B₂H₆ diffusion source gas with hydrogen carrier gas at room temperature and rapid thermal annealing using lamps. Ultrashallow boron doping was achieved at 900 for 60 seconds; that is, the junction depths were less the 60 nm with a peak boron concentration of between 10¹⁹ and 10²⁰ cm^-3. The sheet boron concentrations is controlled by adjusting the flow rate of B₂H₆. To show the potential of the process, bipolar and MOS transistors were fabricated. The base regions of conventional bipolar transistors were formed by rapid vapor-phase doping. Transistors with 20-nm base and emitter were fabricated and they showed current gain of 150. Shallow source and drain of PMOS transistors were also formed. The threshold voltage roll-off was suppressed down to gate length of 0.22 µm, while devices with BF₂-implanted source and drain showed the roll-off below 0.5 µm. Devices with RVD-source and drain thus have drain current 1.5 times higher than those with BF₂ ion implantation. RVD provides both good short-channel characteristics and high current drivability.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 554
EP - 559
AU - Yukihiro KIYOTA
AU - Tohru NAKAMURA
AU - Seiji SUZUKI
AU - Taroh INADA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1996
AB - Ultrashallow p-type layers have been formed using an one-wafer type reactor for rapid vapor-phase doping (RVD) with lamp annealing system. Bipolar and MOS transistors were fabricated using the system for the first time. The process includes the injection of the B₂H₆ diffusion source gas with hydrogen carrier gas at room temperature and rapid thermal annealing using lamps. Ultrashallow boron doping was achieved at 900 for 60 seconds; that is, the junction depths were less the 60 nm with a peak boron concentration of between 10¹⁹ and 10²⁰ cm^-3. The sheet boron concentrations is controlled by adjusting the flow rate of B₂H₆. To show the potential of the process, bipolar and MOS transistors were fabricated. The base regions of conventional bipolar transistors were formed by rapid vapor-phase doping. Transistors with 20-nm base and emitter were fabricated and they showed current gain of 150. Shallow source and drain of PMOS transistors were also formed. The threshold voltage roll-off was suppressed down to gate length of 0.22 µm, while devices with BF₂-implanted source and drain showed the roll-off below 0.5 µm. Devices with RVD-source and drain thus have drain current 1.5 times higher than those with BF₂ ion implantation. RVD provides both good short-channel characteristics and high current drivability.
ER -