An lmproved Gate Current Model of GaAs FET's for Nonlinear Circuit Simulation

Shigeru WATANABE; Yuji ODA

An lmproved Gate Current Model of GaAs FET's for Nonlinear Circuit Simulation

Shigeru WATANABE, Yuji ODA

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An improved gate current model of GaAs FET's is presented. A conventional gate current and the reverse breakdown characteristics. Conseguentli, the model has been determined only by the forward current model fails to fit measured results in the reverse bias range, under which power amplifiers operate. The proposed model improves this problem and shows a great enhancement in accuracy throughout the whole operation range of FET's. The model consists of three diodes and a resistor, which are standerd elements implemented in commercially available circuit simulators, and thus it can easily be used for analyzing performances of various FET circits.

Publication: IEICE TRANSACTIONS on Electronics Vol.E79-C No.5 pp.606-610

Publication Date: 1996/05/25

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Type of Manuscript: Special Section PAPER (Special Issue on Microwave Devices for Mobile Communications)

Category: Active Devices

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Shigeru WATANABE, Yuji ODA, "An lmproved Gate Current Model of GaAs FET's for Nonlinear Circuit Simulation" in IEICE TRANSACTIONS on Electronics, vol. E79-C, no. 5, pp. 606-610, May 1996, doi: .
Abstract: An improved gate current model of GaAs FET's is presented. A conventional gate current and the reverse breakdown characteristics. Conseguentli, the model has been determined only by the forward current model fails to fit measured results in the reverse bias range, under which power amplifiers operate. The proposed model improves this problem and shows a great enhancement in accuracy throughout the whole operation range of FET's. The model consists of three diodes and a resistor, which are standerd elements implemented in commercially available circuit simulators, and thus it can easily be used for analyzing performances of various FET circits.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_5_606/_p

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@ARTICLE{e79-c_5_606,
author={Shigeru WATANABE, Yuji ODA, },
journal={IEICE TRANSACTIONS on Electronics},
title={An lmproved Gate Current Model of GaAs FET's for Nonlinear Circuit Simulation},
year={1996},
volume={E79-C},
number={5},
pages={606-610},
abstract={An improved gate current model of GaAs FET's is presented. A conventional gate current and the reverse breakdown characteristics. Conseguentli, the model has been determined only by the forward current model fails to fit measured results in the reverse bias range, under which power amplifiers operate. The proposed model improves this problem and shows a great enhancement in accuracy throughout the whole operation range of FET's. The model consists of three diodes and a resistor, which are standerd elements implemented in commercially available circuit simulators, and thus it can easily be used for analyzing performances of various FET circits.},
keywords={},
doi={},
ISSN={},
month={May},}

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TY - JOUR
TI - An lmproved Gate Current Model of GaAs FET's for Nonlinear Circuit Simulation
T2 - IEICE TRANSACTIONS on Electronics
SP - 606
EP - 610
AU - Shigeru WATANABE
AU - Yuji ODA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1996
AB - An improved gate current model of GaAs FET's is presented. A conventional gate current and the reverse breakdown characteristics. Conseguentli, the model has been determined only by the forward current model fails to fit measured results in the reverse bias range, under which power amplifiers operate. The proposed model improves this problem and shows a great enhancement in accuracy throughout the whole operation range of FET's. The model consists of three diodes and a resistor, which are standerd elements implemented in commercially available circuit simulators, and thus it can easily be used for analyzing performances of various FET circits.
ER -