IEICE TRANSACTIONS on Electronics
3-V Operation Power HBTs for Digital Cellular Phones
Summary :
AlGaAs/GaAs power HBTs for digital cellular phones have been developed. A three-dimensional thermal analysis taking the local-temperature dependence of the collector current into account was applied to the thermal design of the HBTs. The HBTs were fabricated using the hetero-guardring fully selfaligned transistor technique. The HBT with 2
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.5 pp.617-622
- Publication Date
- 1996/05/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Microwave Devices for Mobile Communications)
- Category
- Active Devices
Authors
Keyword
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Chang-Woo KIM, Nobuyuki HAYAMA, Hideki TAKAHASHI, Yosuke MIYOSHI, Norio GOTO, Kazuhiko HONJO, "3-V Operation Power HBTs for Digital Cellular Phones" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 5, pp. 617-622, May 1996, doi: .
Abstract: AlGaAs/GaAs power HBTs for digital cellular phones have been developed. A three-dimensional thermal analysis taking the local-temperature dependence of the collector current into account was applied to the thermal design of the HBTs. The HBTs were fabricated using the hetero-guardring fully selfaligned transistor technique. The HBT with 2
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_5_617/_p
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@ARTICLE{e79-c_5_617,
author={Chang-Woo KIM, Nobuyuki HAYAMA, Hideki TAKAHASHI, Yosuke MIYOSHI, Norio GOTO, Kazuhiko HONJO, },
journal={IEICE TRANSACTIONS on Electronics},
title={3-V Operation Power HBTs for Digital Cellular Phones},
year={1996},
volume={E79-C},
number={5},
pages={617-622},
abstract={AlGaAs/GaAs power HBTs for digital cellular phones have been developed. A three-dimensional thermal analysis taking the local-temperature dependence of the collector current into account was applied to the thermal design of the HBTs. The HBTs were fabricated using the hetero-guardring fully selfaligned transistor technique. The HBT with 2
keywords={},
doi={},
ISSN={},
month={May},}
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TY - JOUR
TI - 3-V Operation Power HBTs for Digital Cellular Phones
T2 - IEICE TRANSACTIONS on Electronics
SP - 617
EP - 622
AU - Chang-Woo KIM
AU - Nobuyuki HAYAMA
AU - Hideki TAKAHASHI
AU - Yosuke MIYOSHI
AU - Norio GOTO
AU - Kazuhiko HONJO
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1996
AB - AlGaAs/GaAs power HBTs for digital cellular phones have been developed. A three-dimensional thermal analysis taking the local-temperature dependence of the collector current into account was applied to the thermal design of the HBTs. The HBTs were fabricated using the hetero-guardring fully selfaligned transistor technique. The HBT with 2
ER -
English
