IEICE TRANSACTIONS on Electronics
Characteristics of a-Si Thin-Film Transistors with an Inorganic Black Matrix on the Top
Summary :
The characteristics of a-Si bottom-gate TFT test devices with several kinds of inorganic "quasi-black matrix," such as metal, semiconductor, and insulator, on the top were investigated for various black matrix(BM) resistivities. In the Ia-Vg characteristics, for a BM sheet resistance of about
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.8 pp.1091-1096
- Publication Date
- 1996/08/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on Liquid-Crystal Displays)
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Yoshimine KATO, Yuki MIYOSHI, Masakazu ATSUMI, Yoshimasa KAIDA, Steven L. WRIGHT, Lauren F. PALMATEER, "Characteristics of a-Si Thin-Film Transistors with an Inorganic Black Matrix on the Top" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 8, pp. 1091-1096, August 1996, doi: .
Abstract: The characteristics of a-Si bottom-gate TFT test devices with several kinds of inorganic "quasi-black matrix," such as metal, semiconductor, and insulator, on the top were investigated for various black matrix(BM) resistivities. In the Ia-Vg characteristics, for a BM sheet resistance of about
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_8_1091/_p
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@ARTICLE{e79-c_8_1091,
author={Yoshimine KATO, Yuki MIYOSHI, Masakazu ATSUMI, Yoshimasa KAIDA, Steven L. WRIGHT, Lauren F. PALMATEER, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characteristics of a-Si Thin-Film Transistors with an Inorganic Black Matrix on the Top},
year={1996},
volume={E79-C},
number={8},
pages={1091-1096},
abstract={The characteristics of a-Si bottom-gate TFT test devices with several kinds of inorganic "quasi-black matrix," such as metal, semiconductor, and insulator, on the top were investigated for various black matrix(BM) resistivities. In the Ia-Vg characteristics, for a BM sheet resistance of about
keywords={},
doi={},
ISSN={},
month={August},}
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TY - JOUR
TI - Characteristics of a-Si Thin-Film Transistors with an Inorganic Black Matrix on the Top
T2 - IEICE TRANSACTIONS on Electronics
SP - 1091
EP - 1096
AU - Yoshimine KATO
AU - Yuki MIYOSHI
AU - Masakazu ATSUMI
AU - Yoshimasa KAIDA
AU - Steven L. WRIGHT
AU - Lauren F. PALMATEER
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1996
AB - The characteristics of a-Si bottom-gate TFT test devices with several kinds of inorganic "quasi-black matrix," such as metal, semiconductor, and insulator, on the top were investigated for various black matrix(BM) resistivities. In the Ia-Vg characteristics, for a BM sheet resistance of about
ER -
English
