Analysis by I-V Curves for Intrinsic Josephson Junctions of Tl2Ba2CaCu2Ox Thin Films on MgO Substrates

Shuichi YOSHIKAWA; Masaaki NEMOTO; Kazuhiro SHIMAOKA; Isao YOSHIDA; Yorinobu YOSHISATO

IEICE TRANSACTIONS on Electronics

Analysis by I-V Curves for Intrinsic Josephson Junctions of Tl₂Ba₂CaCu₂O_x Thin Films on MgO Substrates

Shuichi YOSHIKAWA, Masaaki NEMOTO, Kazuhiro SHIMAOKA, Isao YOSHIDA, Yorinobu YOSHISATO

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We successfully observed curent-voltage (I-V) curves which showed the behavior of intrinsic Josephson junctions using Tl₂Ba₂CaCu₂O_x (Tl-2212) thin films on MgO substrates by structuring mesas and measuring the electrical transport properties along the c-axis. For a 55 µm² mesa, a hysteretic I-V curve was observed up to 80 K, which showed that series-connected SIS-type junctions are formed. Compared with the critical current density (J_c) of more than 106 A/cm2 parallel to the ab-plane, an anisotropic J_c of 1.410² A/cm² along the c-axis was observed at 4.9 K. By focusing on the I-V curve at lower bias current, the constant voltage jumps measured at the first seven branches were estimated to be 26 mV. The normal resistance (R_nk) of a unit SIS junction was estimated to be 580 Ω by substituting the measured voltage jump in the Ambegaokar and Baratoff relation. Using the calculation for McCumber parameter (β_c), the capacitance (C_k) of the unit SIS junction was estimated to be 3.610^-10 F/cm² at 77 K. The I_ckR_nk product was estimated to be 6.4 mV and the cut-off frequency (f_c1/2πR_nkC_k) was calculated to be 3.1 THz at 77 K. The J_c and the hysteresis decreased with an increase in the mesa area, and finally, for a 300300µm² mesa, a resistively shunted junction (RSI) like curve without hysteresis was observed up to 98 K. A J_c of 5.610¹ A/cm² along the c-axis was observed at 6.4 K. This may be explained by the higher content of conductive grain boundaries for a larger mesa area.

Publication: IEICE TRANSACTIONS on Electronics Vol.E80-C No.10 pp.1291-1296

Publication Date: 1997/10/25

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Type of Manuscript: Special Section INVITED PAPER (Special Issue on Basic Properties and Applications of Superconductive Electron Devices)

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Shuichi YOSHIKAWA, Masaaki NEMOTO, Kazuhiro SHIMAOKA, Isao YOSHIDA, Yorinobu YOSHISATO, "Analysis by I-V Curves for Intrinsic Josephson Junctions of Tl2Ba2CaCu2Ox Thin Films on MgO Substrates" in IEICE TRANSACTIONS on Electronics, vol. E80-C, no. 10, pp. 1291-1296, October 1997, doi: .
Abstract: We successfully observed curent-voltage (I-V) curves which showed the behavior of intrinsic Josephson junctions using Tl₂Ba₂CaCu₂O_x (Tl-2212) thin films on MgO substrates by structuring mesas and measuring the electrical transport properties along the c-axis. For a 55 µm² mesa, a hysteretic I-V curve was observed up to 80 K, which showed that series-connected SIS-type junctions are formed. Compared with the critical current density (J_c) of more than 106 A/cm2 parallel to the ab-plane, an anisotropic J_c of 1.410² A/cm² along the c-axis was observed at 4.9 K. By focusing on the I-V curve at lower bias current, the constant voltage jumps measured at the first seven branches were estimated to be 26 mV. The normal resistance (R_nk) of a unit SIS junction was estimated to be 580 Ω by substituting the measured voltage jump in the Ambegaokar and Baratoff relation. Using the calculation for McCumber parameter (β_c), the capacitance (C_k) of the unit SIS junction was estimated to be 3.610^-10 F/cm² at 77 K. The I_ckR_nk product was estimated to be 6.4 mV and the cut-off frequency (f_c1/2πR_nkC_k) was calculated to be 3.1 THz at 77 K. The J_c and the hysteresis decreased with an increase in the mesa area, and finally, for a 300300µm² mesa, a resistively shunted junction (RSI) like curve without hysteresis was observed up to 98 K. A J_c of 5.610¹ A/cm² along the c-axis was observed at 6.4 K. This may be explained by the higher content of conductive grain boundaries for a larger mesa area.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_10_1291/_p

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@ARTICLE{e80-c_10_1291,
author={Shuichi YOSHIKAWA, Masaaki NEMOTO, Kazuhiro SHIMAOKA, Isao YOSHIDA, Yorinobu YOSHISATO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analysis by I-V Curves for Intrinsic Josephson Junctions of Tl2Ba2CaCu2Ox Thin Films on MgO Substrates},
year={1997},
volume={E80-C},
number={10},
pages={1291-1296},
abstract={We successfully observed curent-voltage (I-V) curves which showed the behavior of intrinsic Josephson junctions using Tl₂Ba₂CaCu₂O_x (Tl-2212) thin films on MgO substrates by structuring mesas and measuring the electrical transport properties along the c-axis. For a 55 µm² mesa, a hysteretic I-V curve was observed up to 80 K, which showed that series-connected SIS-type junctions are formed. Compared with the critical current density (J_c) of more than 106 A/cm2 parallel to the ab-plane, an anisotropic J_c of 1.410² A/cm² along the c-axis was observed at 4.9 K. By focusing on the I-V curve at lower bias current, the constant voltage jumps measured at the first seven branches were estimated to be 26 mV. The normal resistance (R_nk) of a unit SIS junction was estimated to be 580 Ω by substituting the measured voltage jump in the Ambegaokar and Baratoff relation. Using the calculation for McCumber parameter (β_c), the capacitance (C_k) of the unit SIS junction was estimated to be 3.610^-10 F/cm² at 77 K. The I_ckR_nk product was estimated to be 6.4 mV and the cut-off frequency (f_c1/2πR_nkC_k) was calculated to be 3.1 THz at 77 K. The J_c and the hysteresis decreased with an increase in the mesa area, and finally, for a 300300µm² mesa, a resistively shunted junction (RSI) like curve without hysteresis was observed up to 98 K. A J_c of 5.610¹ A/cm² along the c-axis was observed at 6.4 K. This may be explained by the higher content of conductive grain boundaries for a larger mesa area.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - Analysis by I-V Curves for Intrinsic Josephson Junctions of Tl2Ba2CaCu2Ox Thin Films on MgO Substrates
T2 - IEICE TRANSACTIONS on Electronics
SP - 1291
EP - 1296
AU - Shuichi YOSHIKAWA
AU - Masaaki NEMOTO
AU - Kazuhiro SHIMAOKA
AU - Isao YOSHIDA
AU - Yorinobu YOSHISATO
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 1997
AB - We successfully observed curent-voltage (I-V) curves which showed the behavior of intrinsic Josephson junctions using Tl₂Ba₂CaCu₂O_x (Tl-2212) thin films on MgO substrates by structuring mesas and measuring the electrical transport properties along the c-axis. For a 55 µm² mesa, a hysteretic I-V curve was observed up to 80 K, which showed that series-connected SIS-type junctions are formed. Compared with the critical current density (J_c) of more than 106 A/cm2 parallel to the ab-plane, an anisotropic J_c of 1.410² A/cm² along the c-axis was observed at 4.9 K. By focusing on the I-V curve at lower bias current, the constant voltage jumps measured at the first seven branches were estimated to be 26 mV. The normal resistance (R_nk) of a unit SIS junction was estimated to be 580 Ω by substituting the measured voltage jump in the Ambegaokar and Baratoff relation. Using the calculation for McCumber parameter (β_c), the capacitance (C_k) of the unit SIS junction was estimated to be 3.610^-10 F/cm² at 77 K. The I_ckR_nk product was estimated to be 6.4 mV and the cut-off frequency (f_c1/2πR_nkC_k) was calculated to be 3.1 THz at 77 K. The J_c and the hysteresis decreased with an increase in the mesa area, and finally, for a 300300µm² mesa, a resistively shunted junction (RSI) like curve without hysteresis was observed up to 98 K. A J_c of 5.610¹ A/cm² along the c-axis was observed at 6.4 K. This may be explained by the higher content of conductive grain boundaries for a larger mesa area.
ER -

IEICE TRANSACTIONS on Electronics

Analysis by I-V Curves for Intrinsic Josephson Junctions of Tl₂Ba₂CaCu₂O_x Thin Films on MgO Substrates

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