Ferroelectric Field-Control in Pb(Zr0.52Ti0.48)O3/(Y0.6Pr0.4)Ba2Cu3Oy Heterostructures and Their Memory
Summary :
Ferroelectric / superconducting heterostructures of Pb(Zr0.52Ti0.48)O3 [PZT] / (Y0.6Pr0.4)Ba2Cu3Oy [YPBCO] have been formed on SrTiO3(100) substrate using an ArF pulsed laser deposition. The crystallinity and surface morphology of heterostructures were investigated by X-ray diffraction measurements and atomic force microscopy. We also measured dielectric and ferroelectric properties of PZT film in the Au/PZT/YPBCO structure. Furthermore, we fabricated a three-terminal devices having the structure described above using an in-situ metal mask exchange system, and investigated the ferroelectric field effect. As a result, we observed a modulation of channel resistance approximately equal to that estimated from the induced carrier and memory effect due to remanent polarization of PZT.
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- IEICE TRANSACTIONS on Electronics Vol.E80-C No.10 pp.1304-1309
- Publication Date
- 1997/10/25
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- Special Section PAPER (Special Issue on Basic Properties and Applications of Superconductive Electron Devices)
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Shigeki HONTSU, Masaya NAKAMORI, Hitoshi TABATA, Junya ISHII, Tomoji KAWAI, "Ferroelectric Field-Control in Pb(Zr0.52Ti0.48)O3/(Y0.6Pr0.4)Ba2Cu3Oy Heterostructures and Their Memory" in IEICE TRANSACTIONS on Electronics,
vol. E80-C, no. 10, pp. 1304-1309, October 1997, doi: .
Abstract: Ferroelectric / superconducting heterostructures of Pb(Zr0.52Ti0.48)O3 [PZT] / (Y0.6Pr0.4)Ba2Cu3Oy [YPBCO] have been formed on SrTiO3(100) substrate using an ArF pulsed laser deposition. The crystallinity and surface morphology of heterostructures were investigated by X-ray diffraction measurements and atomic force microscopy. We also measured dielectric and ferroelectric properties of PZT film in the Au/PZT/YPBCO structure. Furthermore, we fabricated a three-terminal devices having the structure described above using an in-situ metal mask exchange system, and investigated the ferroelectric field effect. As a result, we observed a modulation of channel resistance approximately equal to that estimated from the induced carrier and memory effect due to remanent polarization of PZT.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_10_1304/_p
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@ARTICLE{e80-c_10_1304,
author={Shigeki HONTSU, Masaya NAKAMORI, Hitoshi TABATA, Junya ISHII, Tomoji KAWAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Ferroelectric Field-Control in Pb(Zr0.52Ti0.48)O3/(Y0.6Pr0.4)Ba2Cu3Oy Heterostructures and Their Memory},
year={1997},
volume={E80-C},
number={10},
pages={1304-1309},
abstract={Ferroelectric / superconducting heterostructures of Pb(Zr0.52Ti0.48)O3 [PZT] / (Y0.6Pr0.4)Ba2Cu3Oy [YPBCO] have been formed on SrTiO3(100) substrate using an ArF pulsed laser deposition. The crystallinity and surface morphology of heterostructures were investigated by X-ray diffraction measurements and atomic force microscopy. We also measured dielectric and ferroelectric properties of PZT film in the Au/PZT/YPBCO structure. Furthermore, we fabricated a three-terminal devices having the structure described above using an in-situ metal mask exchange system, and investigated the ferroelectric field effect. As a result, we observed a modulation of channel resistance approximately equal to that estimated from the induced carrier and memory effect due to remanent polarization of PZT.},
keywords={},
doi={},
ISSN={},
month={October},}
Copy
TY - JOUR
TI - Ferroelectric Field-Control in Pb(Zr0.52Ti0.48)O3/(Y0.6Pr0.4)Ba2Cu3Oy Heterostructures and Their Memory
T2 - IEICE TRANSACTIONS on Electronics
SP - 1304
EP - 1309
AU - Shigeki HONTSU
AU - Masaya NAKAMORI
AU - Hitoshi TABATA
AU - Junya ISHII
AU - Tomoji KAWAI
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 1997
AB - Ferroelectric / superconducting heterostructures of Pb(Zr0.52Ti0.48)O3 [PZT] / (Y0.6Pr0.4)Ba2Cu3Oy [YPBCO] have been formed on SrTiO3(100) substrate using an ArF pulsed laser deposition. The crystallinity and surface morphology of heterostructures were investigated by X-ray diffraction measurements and atomic force microscopy. We also measured dielectric and ferroelectric properties of PZT film in the Au/PZT/YPBCO structure. Furthermore, we fabricated a three-terminal devices having the structure described above using an in-situ metal mask exchange system, and investigated the ferroelectric field effect. As a result, we observed a modulation of channel resistance approximately equal to that estimated from the induced carrier and memory effect due to remanent polarization of PZT.
ER -
English
