Characterization of Butt-Joint InGaAsP Waveguides and Their Application to 1310 nm DBR-Type MQW Gain-Clamped Semiconductor Optical Amplifiers

J.J.M. BINSMA; P.J.A. THIJS; T. van DONGEN; E.J. JANSEN; A.A.M.(Toine) STARING; G.N. van den HOVEN; L.F. TIEMEIJER

Characterization of Butt-Joint InGaAsP Waveguides and Their Application to 1310 nm DBR-Type MQW Gain-Clamped Semiconductor Optical Amplifiers

J.J.M. BINSMA, P.J.A. THIJS, T. van DONGEN, E.J. JANSEN, A.A.M.(Toine) STARING, G.N. van den HOVEN, L.F. TIEMEIJER

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Butt-joint waveguide couplings are fabricated for use in InP-based photonic integration, and characterized by scanning electron microscopy and optical transmission measurements. Several parameters have been optimized in the characterization study: size and shape of the mask protecting the first waveguide layer during butt-joint regrowth, and the crystallographic direction of the butt-joint interface. The studies show that high-quality butt-joints having negligible optical loss can be made with good fabrication tolerance. Using the optimized butt-joint, DBR-type, gain-clamped SOAs have been fabricated which are free of internal excess reflections. A constant optical gain of 21 dB is obtained up to a signal output power of 25 mW. The devices show CATV grade linearity in a 77 channel CATV linearity test at a distortion level of -55 dB below carrier.

Publication: IEICE TRANSACTIONS on Electronics Vol.E80-C No.5 pp.675-681

Publication Date: 1997/05/25

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Type of Manuscript: Special Section PAPER (Special Issue on Photonic Integrated Circuits)

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J.J.M. BINSMA, P.J.A. THIJS, T. van DONGEN, E.J. JANSEN, A.A.M.(Toine) STARING, G.N. van den HOVEN, L.F. TIEMEIJER, "Characterization of Butt-Joint InGaAsP Waveguides and Their Application to 1310 nm DBR-Type MQW Gain-Clamped Semiconductor Optical Amplifiers" in IEICE TRANSACTIONS on Electronics, vol. E80-C, no. 5, pp. 675-681, May 1997, doi: .
Abstract: Butt-joint waveguide couplings are fabricated for use in InP-based photonic integration, and characterized by scanning electron microscopy and optical transmission measurements. Several parameters have been optimized in the characterization study: size and shape of the mask protecting the first waveguide layer during butt-joint regrowth, and the crystallographic direction of the butt-joint interface. The studies show that high-quality butt-joints having negligible optical loss can be made with good fabrication tolerance. Using the optimized butt-joint, DBR-type, gain-clamped SOAs have been fabricated which are free of internal excess reflections. A constant optical gain of 21 dB is obtained up to a signal output power of 25 mW. The devices show CATV grade linearity in a 77 channel CATV linearity test at a distortion level of -55 dB below carrier.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e80-c_5_675/_p

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@ARTICLE{e80-c_5_675,
author={J.J.M. BINSMA, P.J.A. THIJS, T. van DONGEN, E.J. JANSEN, A.A.M.(Toine) STARING, G.N. van den HOVEN, L.F. TIEMEIJER, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization of Butt-Joint InGaAsP Waveguides and Their Application to 1310 nm DBR-Type MQW Gain-Clamped Semiconductor Optical Amplifiers},
year={1997},
volume={E80-C},
number={5},
pages={675-681},
abstract={Butt-joint waveguide couplings are fabricated for use in InP-based photonic integration, and characterized by scanning electron microscopy and optical transmission measurements. Several parameters have been optimized in the characterization study: size and shape of the mask protecting the first waveguide layer during butt-joint regrowth, and the crystallographic direction of the butt-joint interface. The studies show that high-quality butt-joints having negligible optical loss can be made with good fabrication tolerance. Using the optimized butt-joint, DBR-type, gain-clamped SOAs have been fabricated which are free of internal excess reflections. A constant optical gain of 21 dB is obtained up to a signal output power of 25 mW. The devices show CATV grade linearity in a 77 channel CATV linearity test at a distortion level of -55 dB below carrier.},
keywords={},
doi={},
ISSN={},
month={May},}

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TY - JOUR
TI - Characterization of Butt-Joint InGaAsP Waveguides and Their Application to 1310 nm DBR-Type MQW Gain-Clamped Semiconductor Optical Amplifiers
T2 - IEICE TRANSACTIONS on Electronics
SP - 675
EP - 681
AU - J.J.M. BINSMA
AU - P.J.A. THIJS
AU - T. van DONGEN
AU - E.J. JANSEN
AU - A.A.M.(Toine) STARING
AU - G.N. van den HOVEN
AU - L.F. TIEMEIJER
PY - 1997
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E80-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1997
AB - Butt-joint waveguide couplings are fabricated for use in InP-based photonic integration, and characterized by scanning electron microscopy and optical transmission measurements. Several parameters have been optimized in the characterization study: size and shape of the mask protecting the first waveguide layer during butt-joint regrowth, and the crystallographic direction of the butt-joint interface. The studies show that high-quality butt-joints having negligible optical loss can be made with good fabrication tolerance. Using the optimized butt-joint, DBR-type, gain-clamped SOAs have been fabricated which are free of internal excess reflections. A constant optical gain of 21 dB is obtained up to a signal output power of 25 mW. The devices show CATV grade linearity in a 77 channel CATV linearity test at a distortion level of -55 dB below carrier.
ER -