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Electron-Beam-Damaged YBa2Cu3O7-y Josephson Junctions for High-Frequency Device Applications

Sang-Jae KIM, Tsutomu YAMASHITA

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Summary :

We investigate the basic properties of focused electron beam (FEB)-damaged Josephson junctions on silicon (Si) substrates for high-frequency device applications. YBa2Cu3O7-y (YBCO) Josephson junction arrays were also fabricated by FEB irradiation to confirm the junction uniformity and to investigate their applicability. The junctions exhibit resistively shunted junction (RSJ)-like current-voltage (I-V) curves and the microwave-induced Shapiro steps for all operation temperatures. Two-junction arrays show single-junction-like behavior with the Shapiro steps in an array up to 2 mV. Microwave-induced Shapiro steps correspond to the double voltages Vn=2nVJ, where VJ=f0h/2e in two-junction arrays. The microwave power dependence of I-V curves shows the steps corresponding to the RSJ model.

Publication
IEICE TRANSACTIONS on Electronics Vol.E81-C No.10 pp.1544-1548
Publication Date
1998/10/25
Publicized
Online ISSN
DOI
Type of Manuscript
Special Section PAPER (Special Issue on Low- and High-Temperature Superconductive Electron Devices and Their Applications)
Category
High-Tc Junction Technology

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