We investigate the basic properties of focused electron beam (FEB)-damaged Josephson junctions on silicon (Si) substrates for high-frequency device applications. YBa2Cu3O7-y (YBCO) Josephson junction arrays were also fabricated by FEB irradiation to confirm the junction uniformity and to investigate their applicability. The junctions exhibit resistively shunted junction (RSJ)-like current-voltage (I-V) curves and the microwave-induced Shapiro steps for all operation temperatures. Two-junction arrays show single-junction-like behavior with the Shapiro steps in an array up to 2 mV. Microwave-induced Shapiro steps correspond to the double voltages Vn
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Sang-Jae KIM, Tsutomu YAMASHITA, "Electron-Beam-Damaged YBa2Cu3O7-y Josephson Junctions for High-Frequency Device Applications" in IEICE TRANSACTIONS on Electronics,
vol. E81-C, no. 10, pp. 1544-1548, October 1998, doi: .
Abstract: We investigate the basic properties of focused electron beam (FEB)-damaged Josephson junctions on silicon (Si) substrates for high-frequency device applications. YBa2Cu3O7-y (YBCO) Josephson junction arrays were also fabricated by FEB irradiation to confirm the junction uniformity and to investigate their applicability. The junctions exhibit resistively shunted junction (RSJ)-like current-voltage (I-V) curves and the microwave-induced Shapiro steps for all operation temperatures. Two-junction arrays show single-junction-like behavior with the Shapiro steps in an array up to 2 mV. Microwave-induced Shapiro steps correspond to the double voltages Vn
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_10_1544/_p
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@ARTICLE{e81-c_10_1544,
author={Sang-Jae KIM, Tsutomu YAMASHITA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Electron-Beam-Damaged YBa2Cu3O7-y Josephson Junctions for High-Frequency Device Applications},
year={1998},
volume={E81-C},
number={10},
pages={1544-1548},
abstract={We investigate the basic properties of focused electron beam (FEB)-damaged Josephson junctions on silicon (Si) substrates for high-frequency device applications. YBa2Cu3O7-y (YBCO) Josephson junction arrays were also fabricated by FEB irradiation to confirm the junction uniformity and to investigate their applicability. The junctions exhibit resistively shunted junction (RSJ)-like current-voltage (I-V) curves and the microwave-induced Shapiro steps for all operation temperatures. Two-junction arrays show single-junction-like behavior with the Shapiro steps in an array up to 2 mV. Microwave-induced Shapiro steps correspond to the double voltages Vn
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - Electron-Beam-Damaged YBa2Cu3O7-y Josephson Junctions for High-Frequency Device Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1544
EP - 1548
AU - Sang-Jae KIM
AU - Tsutomu YAMASHITA
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 1998
AB - We investigate the basic properties of focused electron beam (FEB)-damaged Josephson junctions on silicon (Si) substrates for high-frequency device applications. YBa2Cu3O7-y (YBCO) Josephson junction arrays were also fabricated by FEB irradiation to confirm the junction uniformity and to investigate their applicability. The junctions exhibit resistively shunted junction (RSJ)-like current-voltage (I-V) curves and the microwave-induced Shapiro steps for all operation temperatures. Two-junction arrays show single-junction-like behavior with the Shapiro steps in an array up to 2 mV. Microwave-induced Shapiro steps correspond to the double voltages Vn
ER -