Gd2O2S:Tb phosphor thin films have been prepared using the simple technique of electron beam evaporation for large area display applications. The photoluminescence and excitation spectra measurement of Gd2O2S:Tb phosphor thin films suggest that Tb3+ is incorporated into the Gd2O2S lattice at gadolinium sites. Relatively efficient electroluminescence is observed from a ZnS/Gd2O2S:Tb/ZnS sandwich cell.
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Virendra SHANKER, Koutoku OHMI, Shosaku TANAKA, Hitoshi KOBAYASHI, "Gd2O2S:Tb Phosphor Thin Films Grown by Electron Beam Evaporation and Their Photoluminescent and Electroluminescent Characteristics" in IEICE TRANSACTIONS on Electronics,
vol. E81-C, no. 11, pp. 1721-1724, November 1998, doi: .
Abstract: Gd2O2S:Tb phosphor thin films have been prepared using the simple technique of electron beam evaporation for large area display applications. The photoluminescence and excitation spectra measurement of Gd2O2S:Tb phosphor thin films suggest that Tb3+ is incorporated into the Gd2O2S lattice at gadolinium sites. Relatively efficient electroluminescence is observed from a ZnS/Gd2O2S:Tb/ZnS sandwich cell.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_11_1721/_p
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@ARTICLE{e81-c_11_1721,
author={Virendra SHANKER, Koutoku OHMI, Shosaku TANAKA, Hitoshi KOBAYASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Gd2O2S:Tb Phosphor Thin Films Grown by Electron Beam Evaporation and Their Photoluminescent and Electroluminescent Characteristics},
year={1998},
volume={E81-C},
number={11},
pages={1721-1724},
abstract={Gd2O2S:Tb phosphor thin films have been prepared using the simple technique of electron beam evaporation for large area display applications. The photoluminescence and excitation spectra measurement of Gd2O2S:Tb phosphor thin films suggest that Tb3+ is incorporated into the Gd2O2S lattice at gadolinium sites. Relatively efficient electroluminescence is observed from a ZnS/Gd2O2S:Tb/ZnS sandwich cell.},
keywords={},
doi={},
ISSN={},
month={November},}
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TY - JOUR
TI - Gd2O2S:Tb Phosphor Thin Films Grown by Electron Beam Evaporation and Their Photoluminescent and Electroluminescent Characteristics
T2 - IEICE TRANSACTIONS on Electronics
SP - 1721
EP - 1724
AU - Virendra SHANKER
AU - Koutoku OHMI
AU - Shosaku TANAKA
AU - Hitoshi KOBAYASHI
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1998
AB - Gd2O2S:Tb phosphor thin films have been prepared using the simple technique of electron beam evaporation for large area display applications. The photoluminescence and excitation spectra measurement of Gd2O2S:Tb phosphor thin films suggest that Tb3+ is incorporated into the Gd2O2S lattice at gadolinium sites. Relatively efficient electroluminescence is observed from a ZnS/Gd2O2S:Tb/ZnS sandwich cell.
ER -