Dielectric and Ferroelectric Properties of Heteroepitaxial BaxSr1-x TiO 3 Films Grown on SrRuO 3/SrTiO 3 Substrates
Summary :
To investigate the possibility of their application to both high density dynamic and nonvolatile ferroelectric random access memories, heteroepitaxial BaxSr1-xTiO3 (BSTO) thin films with various Ba content from x=0 to 1. 0 were prepared on conductive SrRuO3 electrode films, and the crystallographic, dielectric and ferroelectric properties were investigated. The compositional phase boundary between paraelectric and ferroelectric phase at room temperature was located at about x = 0. 12 in the heteroepitaxial films, indicating a quite different composition to that of the bulk (x = 0. 70). At this composition of x = 0. 12, the dielectric constant attained the maximum value of 740 for the BSTO film with a thickness of 77 nm. The composition with a lager Ba content (x
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- IEICE TRANSACTIONS on Electronics Vol.E81-C No.4 pp.505-512
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- 1998/04/25
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- Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
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Kazuhide ABE, Naoko YANASE, Shuichi KOMATSU, Kenya SANO, Noburu FUKUSHIMA, Takashi KAWAKUBO, "Dielectric and Ferroelectric Properties of Heteroepitaxial BaxSr1-x TiO 3 Films Grown on SrRuO 3/SrTiO 3 Substrates" in IEICE TRANSACTIONS on Electronics,
vol. E81-C, no. 4, pp. 505-512, April 1998, doi: .
Abstract: To investigate the possibility of their application to both high density dynamic and nonvolatile ferroelectric random access memories, heteroepitaxial BaxSr1-xTiO3 (BSTO) thin films with various Ba content from x=0 to 1. 0 were prepared on conductive SrRuO3 electrode films, and the crystallographic, dielectric and ferroelectric properties were investigated. The compositional phase boundary between paraelectric and ferroelectric phase at room temperature was located at about x = 0. 12 in the heteroepitaxial films, indicating a quite different composition to that of the bulk (x = 0. 70). At this composition of x = 0. 12, the dielectric constant attained the maximum value of 740 for the BSTO film with a thickness of 77 nm. The composition with a lager Ba content (x
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_4_505/_p
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@ARTICLE{e81-c_4_505,
author={Kazuhide ABE, Naoko YANASE, Shuichi KOMATSU, Kenya SANO, Noburu FUKUSHIMA, Takashi KAWAKUBO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Dielectric and Ferroelectric Properties of Heteroepitaxial BaxSr1-x TiO 3 Films Grown on SrRuO 3/SrTiO 3 Substrates},
year={1998},
volume={E81-C},
number={4},
pages={505-512},
abstract={To investigate the possibility of their application to both high density dynamic and nonvolatile ferroelectric random access memories, heteroepitaxial BaxSr1-xTiO3 (BSTO) thin films with various Ba content from x=0 to 1. 0 were prepared on conductive SrRuO3 electrode films, and the crystallographic, dielectric and ferroelectric properties were investigated. The compositional phase boundary between paraelectric and ferroelectric phase at room temperature was located at about x = 0. 12 in the heteroepitaxial films, indicating a quite different composition to that of the bulk (x = 0. 70). At this composition of x = 0. 12, the dielectric constant attained the maximum value of 740 for the BSTO film with a thickness of 77 nm. The composition with a lager Ba content (x
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Dielectric and Ferroelectric Properties of Heteroepitaxial BaxSr1-x TiO 3 Films Grown on SrRuO 3/SrTiO 3 Substrates
T2 - IEICE TRANSACTIONS on Electronics
SP - 505
EP - 512
AU - Kazuhide ABE
AU - Naoko YANASE
AU - Shuichi KOMATSU
AU - Kenya SANO
AU - Noburu FUKUSHIMA
AU - Takashi KAWAKUBO
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1998
AB - To investigate the possibility of their application to both high density dynamic and nonvolatile ferroelectric random access memories, heteroepitaxial BaxSr1-xTiO3 (BSTO) thin films with various Ba content from x=0 to 1. 0 were prepared on conductive SrRuO3 electrode films, and the crystallographic, dielectric and ferroelectric properties were investigated. The compositional phase boundary between paraelectric and ferroelectric phase at room temperature was located at about x = 0. 12 in the heteroepitaxial films, indicating a quite different composition to that of the bulk (x = 0. 70). At this composition of x = 0. 12, the dielectric constant attained the maximum value of 740 for the BSTO film with a thickness of 77 nm. The composition with a lager Ba content (x
ER -
English
