Hetero-Epitaxial PbZr0. 48Ti0. 52O3 Capacitors with Oxide Electrodes
Summary :
Two types of hetero-epitaxial PbZr0. 48Ti0. 52O3 (PZT) capacitors were fabricated by pulsed laser deposition (PLD). One has an Au/PZT/SrRuO3(SRO)/SrTiO3(STO) structure with remanent polarization (Pr) of 32. 1 µC/cm2. The other has an Au/PZT/La-doped STO (La: STO) structure with Pr of 9. 6 to 13. 5 µC/cm2. X-ray diffraction patterns show that only the (00l) planes of the PZT and SRO are parallel to the substrate surface for the PZT/SRO/STO structure, however, a (111) plane of the PZT is observed, in addition to the (00l) planes, for the PZT/La: STO structure. High resolution-transmission electron microscope (HR-TEM) images show that the PZT/SRO interface is clean and coherent. However, spherical shape contrast with radius about 5 nm is observed at the PZT/La: STO interface. Diffusion of La and/or the contaminated surface of the La: STO substrate is thought to cause the differences in the PZT orientations and the interfaces, affecting the electrical characteristics of the capacitors.
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- IEICE TRANSACTIONS on Electronics Vol.E81-C No.4 pp.523-527
- Publication Date
- 1998/04/25
- Publicized
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- Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
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Mitsuo SUGA, Masahiko HIRATANI, Choichiro OKAZAKI, Masanari KOGUCHI, Hiroshi KAKIBAYASHI, "Hetero-Epitaxial PbZr0. 48Ti0. 52O3 Capacitors with Oxide Electrodes" in IEICE TRANSACTIONS on Electronics,
vol. E81-C, no. 4, pp. 523-527, April 1998, doi: .
Abstract: Two types of hetero-epitaxial PbZr0. 48Ti0. 52O3 (PZT) capacitors were fabricated by pulsed laser deposition (PLD). One has an Au/PZT/SrRuO3(SRO)/SrTiO3(STO) structure with remanent polarization (Pr) of 32. 1 µC/cm2. The other has an Au/PZT/La-doped STO (La: STO) structure with Pr of 9. 6 to 13. 5 µC/cm2. X-ray diffraction patterns show that only the (00l) planes of the PZT and SRO are parallel to the substrate surface for the PZT/SRO/STO structure, however, a (111) plane of the PZT is observed, in addition to the (00l) planes, for the PZT/La: STO structure. High resolution-transmission electron microscope (HR-TEM) images show that the PZT/SRO interface is clean and coherent. However, spherical shape contrast with radius about 5 nm is observed at the PZT/La: STO interface. Diffusion of La and/or the contaminated surface of the La: STO substrate is thought to cause the differences in the PZT orientations and the interfaces, affecting the electrical characteristics of the capacitors.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_4_523/_p
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@ARTICLE{e81-c_4_523,
author={Mitsuo SUGA, Masahiko HIRATANI, Choichiro OKAZAKI, Masanari KOGUCHI, Hiroshi KAKIBAYASHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Hetero-Epitaxial PbZr0. 48Ti0. 52O3 Capacitors with Oxide Electrodes},
year={1998},
volume={E81-C},
number={4},
pages={523-527},
abstract={Two types of hetero-epitaxial PbZr0. 48Ti0. 52O3 (PZT) capacitors were fabricated by pulsed laser deposition (PLD). One has an Au/PZT/SrRuO3(SRO)/SrTiO3(STO) structure with remanent polarization (Pr) of 32. 1 µC/cm2. The other has an Au/PZT/La-doped STO (La: STO) structure with Pr of 9. 6 to 13. 5 µC/cm2. X-ray diffraction patterns show that only the (00l) planes of the PZT and SRO are parallel to the substrate surface for the PZT/SRO/STO structure, however, a (111) plane of the PZT is observed, in addition to the (00l) planes, for the PZT/La: STO structure. High resolution-transmission electron microscope (HR-TEM) images show that the PZT/SRO interface is clean and coherent. However, spherical shape contrast with radius about 5 nm is observed at the PZT/La: STO interface. Diffusion of La and/or the contaminated surface of the La: STO substrate is thought to cause the differences in the PZT orientations and the interfaces, affecting the electrical characteristics of the capacitors.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Hetero-Epitaxial PbZr0. 48Ti0. 52O3 Capacitors with Oxide Electrodes
T2 - IEICE TRANSACTIONS on Electronics
SP - 523
EP - 527
AU - Mitsuo SUGA
AU - Masahiko HIRATANI
AU - Choichiro OKAZAKI
AU - Masanari KOGUCHI
AU - Hiroshi KAKIBAYASHI
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1998
AB - Two types of hetero-epitaxial PbZr0. 48Ti0. 52O3 (PZT) capacitors were fabricated by pulsed laser deposition (PLD). One has an Au/PZT/SrRuO3(SRO)/SrTiO3(STO) structure with remanent polarization (Pr) of 32. 1 µC/cm2. The other has an Au/PZT/La-doped STO (La: STO) structure with Pr of 9. 6 to 13. 5 µC/cm2. X-ray diffraction patterns show that only the (00l) planes of the PZT and SRO are parallel to the substrate surface for the PZT/SRO/STO structure, however, a (111) plane of the PZT is observed, in addition to the (00l) planes, for the PZT/La: STO structure. High resolution-transmission electron microscope (HR-TEM) images show that the PZT/SRO interface is clean and coherent. However, spherical shape contrast with radius about 5 nm is observed at the PZT/La: STO interface. Diffusion of La and/or the contaminated surface of the La: STO substrate is thought to cause the differences in the PZT orientations and the interfaces, affecting the electrical characteristics of the capacitors.
ER -
English
