IEICE TRANSACTIONS on Electronics
Characteristics of Polytetrafluoroethylene Thin Films Prepared by Ionization-Assisted Deposition
Summary :
Thin films of PTFE (mean molecular weight of source material 8500) were deposited by ionization-assisted deposition (IAD) method at different ion acceleration voltages Va on substrates kept at room temperature. The molecular chains in the film were found to be oriented in parallel with the substrate, and the film has preferential crystal orientation to (100) plane. Although the ion acceleration did not give significant influence on the film orientation and chemical structure, IAD was effective to improve the surface smoothness. The Cu decoration test revealed that the pinhole density in the film is reduced and the insulating capability is improved by depositing the film at Va = 500 V. The result of dielectric loss measurement for Al/PTFE/Al capacitors was in consistency. However, excessive ion acceleration deteriorated the insulating property, probably due to the dielectric breakdown that occurred in the course of deposition.
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- IEICE TRANSACTIONS on Electronics Vol.E81-C No.7 pp.1083-1089
- Publication Date
- 1998/07/25
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- Special Section PAPER (Special Issue on Organic Materials for Optics and Electronics)
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Hiroaki USUI, Hiroshi KOSHIKAWA, Kuniaki TANAKA, "Characteristics of Polytetrafluoroethylene Thin Films Prepared by Ionization-Assisted Deposition" in IEICE TRANSACTIONS on Electronics,
vol. E81-C, no. 7, pp. 1083-1089, July 1998, doi: .
Abstract: Thin films of PTFE (mean molecular weight of source material 8500) were deposited by ionization-assisted deposition (IAD) method at different ion acceleration voltages Va on substrates kept at room temperature. The molecular chains in the film were found to be oriented in parallel with the substrate, and the film has preferential crystal orientation to (100) plane. Although the ion acceleration did not give significant influence on the film orientation and chemical structure, IAD was effective to improve the surface smoothness. The Cu decoration test revealed that the pinhole density in the film is reduced and the insulating capability is improved by depositing the film at Va = 500 V. The result of dielectric loss measurement for Al/PTFE/Al capacitors was in consistency. However, excessive ion acceleration deteriorated the insulating property, probably due to the dielectric breakdown that occurred in the course of deposition.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_7_1083/_p
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@ARTICLE{e81-c_7_1083,
author={Hiroaki USUI, Hiroshi KOSHIKAWA, Kuniaki TANAKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characteristics of Polytetrafluoroethylene Thin Films Prepared by Ionization-Assisted Deposition},
year={1998},
volume={E81-C},
number={7},
pages={1083-1089},
abstract={Thin films of PTFE (mean molecular weight of source material 8500) were deposited by ionization-assisted deposition (IAD) method at different ion acceleration voltages Va on substrates kept at room temperature. The molecular chains in the film were found to be oriented in parallel with the substrate, and the film has preferential crystal orientation to (100) plane. Although the ion acceleration did not give significant influence on the film orientation and chemical structure, IAD was effective to improve the surface smoothness. The Cu decoration test revealed that the pinhole density in the film is reduced and the insulating capability is improved by depositing the film at Va = 500 V. The result of dielectric loss measurement for Al/PTFE/Al capacitors was in consistency. However, excessive ion acceleration deteriorated the insulating property, probably due to the dielectric breakdown that occurred in the course of deposition.},
keywords={},
doi={},
ISSN={},
month={July},}
Copy
TY - JOUR
TI - Characteristics of Polytetrafluoroethylene Thin Films Prepared by Ionization-Assisted Deposition
T2 - IEICE TRANSACTIONS on Electronics
SP - 1083
EP - 1089
AU - Hiroaki USUI
AU - Hiroshi KOSHIKAWA
AU - Kuniaki TANAKA
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1998
AB - Thin films of PTFE (mean molecular weight of source material 8500) were deposited by ionization-assisted deposition (IAD) method at different ion acceleration voltages Va on substrates kept at room temperature. The molecular chains in the film were found to be oriented in parallel with the substrate, and the film has preferential crystal orientation to (100) plane. Although the ion acceleration did not give significant influence on the film orientation and chemical structure, IAD was effective to improve the surface smoothness. The Cu decoration test revealed that the pinhole density in the film is reduced and the insulating capability is improved by depositing the film at Va = 500 V. The result of dielectric loss measurement for Al/PTFE/Al capacitors was in consistency. However, excessive ion acceleration deteriorated the insulating property, probably due to the dielectric breakdown that occurred in the course of deposition.
ER -
English
