MQW Electroabsorption Optical Gates for WDM Switching Systems
Summary :
We have developed a multiple quantum well (MQW) electroabsorption (EA) modulator for wavelength-division multiplexing (WDM) switching systems. The fabricated MQW EA gate has low polarization and wavelength-dependent loss and high extinction ratio within the wavelength range of 1545 to 1560 nm. And by using this gate ultra-high-speed switching is achieved for WDM signals. Moreover, we optimize the EA gate for the full gain-band of an erbium-doped fiber amplifier (EDFA)(1535 to 1560 nm). This EA gate provides low polarization-dependent loss, higher extinction ratio, and high saturation input power in the wider wavelength range. These MQW EA gates will play an important role in future WDM switching systems.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E81-C No.8 pp.1232-1236
- Publication Date
- 1998/08/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on High-Capacity WDM/TDM Networks)
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Mari KOIZUMI, Tatemi IDO, "MQW Electroabsorption Optical Gates for WDM Switching Systems" in IEICE TRANSACTIONS on Electronics,
vol. E81-C, no. 8, pp. 1232-1236, August 1998, doi: .
Abstract: We have developed a multiple quantum well (MQW) electroabsorption (EA) modulator for wavelength-division multiplexing (WDM) switching systems. The fabricated MQW EA gate has low polarization and wavelength-dependent loss and high extinction ratio within the wavelength range of 1545 to 1560 nm. And by using this gate ultra-high-speed switching is achieved for WDM signals. Moreover, we optimize the EA gate for the full gain-band of an erbium-doped fiber amplifier (EDFA)(1535 to 1560 nm). This EA gate provides low polarization-dependent loss, higher extinction ratio, and high saturation input power in the wider wavelength range. These MQW EA gates will play an important role in future WDM switching systems.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e81-c_8_1232/_p
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@ARTICLE{e81-c_8_1232,
author={Mari KOIZUMI, Tatemi IDO, },
journal={IEICE TRANSACTIONS on Electronics},
title={MQW Electroabsorption Optical Gates for WDM Switching Systems},
year={1998},
volume={E81-C},
number={8},
pages={1232-1236},
abstract={We have developed a multiple quantum well (MQW) electroabsorption (EA) modulator for wavelength-division multiplexing (WDM) switching systems. The fabricated MQW EA gate has low polarization and wavelength-dependent loss and high extinction ratio within the wavelength range of 1545 to 1560 nm. And by using this gate ultra-high-speed switching is achieved for WDM signals. Moreover, we optimize the EA gate for the full gain-band of an erbium-doped fiber amplifier (EDFA)(1535 to 1560 nm). This EA gate provides low polarization-dependent loss, higher extinction ratio, and high saturation input power in the wider wavelength range. These MQW EA gates will play an important role in future WDM switching systems.},
keywords={},
doi={},
ISSN={},
month={August},}
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TY - JOUR
TI - MQW Electroabsorption Optical Gates for WDM Switching Systems
T2 - IEICE TRANSACTIONS on Electronics
SP - 1232
EP - 1236
AU - Mari KOIZUMI
AU - Tatemi IDO
PY - 1998
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E81-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1998
AB - We have developed a multiple quantum well (MQW) electroabsorption (EA) modulator for wavelength-division multiplexing (WDM) switching systems. The fabricated MQW EA gate has low polarization and wavelength-dependent loss and high extinction ratio within the wavelength range of 1545 to 1560 nm. And by using this gate ultra-high-speed switching is achieved for WDM signals. Moreover, we optimize the EA gate for the full gain-band of an erbium-doped fiber amplifier (EDFA)(1535 to 1560 nm). This EA gate provides low polarization-dependent loss, higher extinction ratio, and high saturation input power in the wider wavelength range. These MQW EA gates will play an important role in future WDM switching systems.
ER -
English
