IEICE TRANSACTIONS on Electronics
Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding
Summary :
This paper describes a distributed amplifier IC module and a distributed 1 : 2 signal distributor IC module for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0. 1-µm-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1 : 2 signal distributor module was 40 GHz and the loss was 2 dB. These modules were demonstrated at 40 Gbit/s and clear eye openings were confirmed.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E82-C No.3 pp.475-482
- Publication Date
- 1999/03/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Category
- Compound Semiconductor Devices
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Hiroyuki KIKUCHI, Hideki TSUNETSUGU, Makoto HIRANO, Satoshi YAMAGUCHI, Yuhki IMAI, "Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 3, pp. 475-482, March 1999, doi: .
Abstract: This paper describes a distributed amplifier IC module and a distributed 1 : 2 signal distributor IC module for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0. 1-µm-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1 : 2 signal distributor module was 40 GHz and the loss was 2 dB. These modules were demonstrated at 40 Gbit/s and clear eye openings were confirmed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_3_475/_p
Copy
@ARTICLE{e82-c_3_475,
author={Hiroyuki KIKUCHI, Hideki TSUNETSUGU, Makoto HIRANO, Satoshi YAMAGUCHI, Yuhki IMAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding},
year={1999},
volume={E82-C},
number={3},
pages={475-482},
abstract={This paper describes a distributed amplifier IC module and a distributed 1 : 2 signal distributor IC module for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0. 1-µm-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1 : 2 signal distributor module was 40 GHz and the loss was 2 dB. These modules were demonstrated at 40 Gbit/s and clear eye openings were confirmed.},
keywords={},
doi={},
ISSN={},
month={March},}
Copy
TY - JOUR
TI - Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding
T2 - IEICE TRANSACTIONS on Electronics
SP - 475
EP - 482
AU - Hiroyuki KIKUCHI
AU - Hideki TSUNETSUGU
AU - Makoto HIRANO
AU - Satoshi YAMAGUCHI
AU - Yuhki IMAI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1999
AB - This paper describes a distributed amplifier IC module and a distributed 1 : 2 signal distributor IC module for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0. 1-µm-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1 : 2 signal distributor module was 40 GHz and the loss was 2 dB. These modules were demonstrated at 40 Gbit/s and clear eye openings were confirmed.
ER -
English
