Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding

Hiroyuki KIKUCHI; Hideki TSUNETSUGU; Makoto HIRANO; Satoshi YAMAGUCHI; Yuhki IMAI

Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding

Hiroyuki KIKUCHI, Hideki TSUNETSUGU, Makoto HIRANO, Satoshi YAMAGUCHI, Yuhki IMAI

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This paper describes a distributed amplifier IC module and a distributed 1 : 2 signal distributor IC module for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0. 1-µm-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1 : 2 signal distributor module was 40 GHz and the loss was 2 dB. These modules were demonstrated at 40 Gbit/s and clear eye openings were confirmed.

Publication: IEICE TRANSACTIONS on Electronics Vol.E82-C No.3 pp.475-482

Publication Date: 1999/03/25

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Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)

Category: Compound Semiconductor Devices

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Hiroyuki KIKUCHI, Hideki TSUNETSUGU, Makoto HIRANO, Satoshi YAMAGUCHI, Yuhki IMAI, "Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding" in IEICE TRANSACTIONS on Electronics, vol. E82-C, no. 3, pp. 475-482, March 1999, doi: .
Abstract: This paper describes a distributed amplifier IC module and a distributed 1 : 2 signal distributor IC module for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0. 1-µm-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1 : 2 signal distributor module was 40 GHz and the loss was 2 dB. These modules were demonstrated at 40 Gbit/s and clear eye openings were confirmed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_3_475/_p

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@ARTICLE{e82-c_3_475,
author={Hiroyuki KIKUCHI, Hideki TSUNETSUGU, Makoto HIRANO, Satoshi YAMAGUCHI, Yuhki IMAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding},
year={1999},
volume={E82-C},
number={3},
pages={475-482},
abstract={This paper describes a distributed amplifier IC module and a distributed 1 : 2 signal distributor IC module for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0. 1-µm-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1 : 2 signal distributor module was 40 GHz and the loss was 2 dB. These modules were demonstrated at 40 Gbit/s and clear eye openings were confirmed.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding
T2 - IEICE TRANSACTIONS on Electronics
SP - 475
EP - 482
AU - Hiroyuki KIKUCHI
AU - Hideki TSUNETSUGU
AU - Makoto HIRANO
AU - Satoshi YAMAGUCHI
AU - Yuhki IMAI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1999
AB - This paper describes a distributed amplifier IC module and a distributed 1 : 2 signal distributor IC module for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0. 1-µm-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1 : 2 signal distributor module was 40 GHz and the loss was 2 dB. These modules were demonstrated at 40 Gbit/s and clear eye openings were confirmed.
ER -