An Approach to Extract Extrinsic Parameters of HEMTs

Man-Young JEON; Yoon-Ha JEONG

An Approach to Extract Extrinsic Parameters of HEMTs

Man-Young JEON, Yoon-Ha JEONG

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To extract extrinsic resistances, conventional cold-FET methods require additional DC measurements or channel technological parameters. Additionally, the methods need at least two sets of cold-FET S-parameters measured at different cold-FET bias conditions in order to completely determine gate and drain pad capacitance as well as extrinsic gate, source and drain inductance and their resistances. One set of S-parameters handles the extraction of extrinsic inductances, and the other set extracts the gate and drain pad capacitance. To be free from additional DC measurement or channel technological parameters and reduce the number of sets of cold-FET S-parameters, we propose a cold-FET method that can extract all the extrinsic elements including the gate and drain capacitance, using only one set of cold-FET S-parameters. The method has shown excellent agreement between modeled and measured S-parameters up to 62 GHz at 56 different normal operating bias points.

Publication: IEICE TRANSACTIONS on Electronics Vol.E83-C No.12 pp.1930-1936

Publication Date: 2000/12/25

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Type of Manuscript: PAPER

Category: Microwaves, Millimeter-Waves

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Man-Young JEON, Yoon-Ha JEONG, "An Approach to Extract Extrinsic Parameters of HEMTs" in IEICE TRANSACTIONS on Electronics, vol. E83-C, no. 12, pp. 1930-1936, December 2000, doi: .
Abstract: To extract extrinsic resistances, conventional cold-FET methods require additional DC measurements or channel technological parameters. Additionally, the methods need at least two sets of cold-FET S-parameters measured at different cold-FET bias conditions in order to completely determine gate and drain pad capacitance as well as extrinsic gate, source and drain inductance and their resistances. One set of S-parameters handles the extraction of extrinsic inductances, and the other set extracts the gate and drain pad capacitance. To be free from additional DC measurement or channel technological parameters and reduce the number of sets of cold-FET S-parameters, we propose a cold-FET method that can extract all the extrinsic elements including the gate and drain capacitance, using only one set of cold-FET S-parameters. The method has shown excellent agreement between modeled and measured S-parameters up to 62 GHz at 56 different normal operating bias points.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_12_1930/_p

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@ARTICLE{e83-c_12_1930,
author={Man-Young JEON, Yoon-Ha JEONG, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Approach to Extract Extrinsic Parameters of HEMTs},
year={2000},
volume={E83-C},
number={12},
pages={1930-1936},
abstract={To extract extrinsic resistances, conventional cold-FET methods require additional DC measurements or channel technological parameters. Additionally, the methods need at least two sets of cold-FET S-parameters measured at different cold-FET bias conditions in order to completely determine gate and drain pad capacitance as well as extrinsic gate, source and drain inductance and their resistances. One set of S-parameters handles the extraction of extrinsic inductances, and the other set extracts the gate and drain pad capacitance. To be free from additional DC measurement or channel technological parameters and reduce the number of sets of cold-FET S-parameters, we propose a cold-FET method that can extract all the extrinsic elements including the gate and drain capacitance, using only one set of cold-FET S-parameters. The method has shown excellent agreement between modeled and measured S-parameters up to 62 GHz at 56 different normal operating bias points.},
keywords={},
doi={},
ISSN={},
month={December},}

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TY - JOUR
TI - An Approach to Extract Extrinsic Parameters of HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1930
EP - 1936
AU - Man-Young JEON
AU - Yoon-Ha JEONG
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2000
AB - To extract extrinsic resistances, conventional cold-FET methods require additional DC measurements or channel technological parameters. Additionally, the methods need at least two sets of cold-FET S-parameters measured at different cold-FET bias conditions in order to completely determine gate and drain pad capacitance as well as extrinsic gate, source and drain inductance and their resistances. One set of S-parameters handles the extraction of extrinsic inductances, and the other set extracts the gate and drain pad capacitance. To be free from additional DC measurement or channel technological parameters and reduce the number of sets of cold-FET S-parameters, we propose a cold-FET method that can extract all the extrinsic elements including the gate and drain capacitance, using only one set of cold-FET S-parameters. The method has shown excellent agreement between modeled and measured S-parameters up to 62 GHz at 56 different normal operating bias points.
ER -