Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure
Summary :
The authors have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 1.5-µm-gate device showed good pinch-off characteristics, gm of 25 mS/mm, and breakdown voltage of 70-90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. These results indicate the potential of p-layer insertion into GaN-based FETs.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E83-C No.12 pp.1968-1970
- Publication Date
- 2000/12/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- LETTER
- Category
- Semiconductor Materials and Devices
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Kenji SHIOJIMA, Naoteru SHIGEKAWA, Tetsuya SUEMITSU, "Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 12, pp. 1968-1970, December 2000, doi: .
Abstract: The authors have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 1.5-µm-gate device showed good pinch-off characteristics, gm of 25 mS/mm, and breakdown voltage of 70-90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. These results indicate the potential of p-layer insertion into GaN-based FETs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_12_1968/_p
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@ARTICLE{e83-c_12_1968,
author={Kenji SHIOJIMA, Naoteru SHIGEKAWA, Tetsuya SUEMITSU, },
journal={IEICE TRANSACTIONS on Electronics},
title={Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure},
year={2000},
volume={E83-C},
number={12},
pages={1968-1970},
abstract={The authors have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 1.5-µm-gate device showed good pinch-off characteristics, gm of 25 mS/mm, and breakdown voltage of 70-90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. These results indicate the potential of p-layer insertion into GaN-based FETs.},
keywords={},
doi={},
ISSN={},
month={December},}
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TY - JOUR
TI - Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure
T2 - IEICE TRANSACTIONS on Electronics
SP - 1968
EP - 1970
AU - Kenji SHIOJIMA
AU - Naoteru SHIGEKAWA
AU - Tetsuya SUEMITSU
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2000
AB - The authors have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 1.5-µm-gate device showed good pinch-off characteristics, gm of 25 mS/mm, and breakdown voltage of 70-90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. These results indicate the potential of p-layer insertion into GaN-based FETs.
ER -
English
